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STF26N60M2
MOSFET N-CH 600V 20A TO220FP
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- 資料表 STF26N60M2 DataSheet
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規格
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 165mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| Vgs(Max) | ±25V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
概述
Description
The STF26N60M2 is a high-performance N-channel MOSFET designed for power applications. It features a voltage rating of 600V and a continuous drain current of 26A, making it suitable for high-voltage switching and power management tasks. The device boasts a low on-resistance (RDS(on)) of 0.26 ohms, which enhances efficiency by minimizing power losses during operation. Its fast switching speed allows for efficient control in various applications, including power supplies, motor drives, and inverters.
The STF26N60M2 is packaged in a TO-220 format, providing effective heat dissipation and ease of mounting. It is widely used in industrial applications due to its robustness and reliability. The device also incorporates a built-in body diode, which is useful in applications requiring reverse conduction. Overall, the STF26N60M2 is an excellent choice for designers looking for a dependable MOSFET for high-voltage applications.
The STF26N60M2 is packaged in a TO-220 format, providing effective heat dissipation and ease of mounting. It is widely used in industrial applications due to its robustness and reliability. The device also incorporates a built-in body diode, which is useful in applications requiring reverse conduction. Overall, the STF26N60M2 is an excellent choice for designers looking for a dependable MOSFET for high-voltage applications.
Features
The STF26N60M2 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 26A, with pulsed current capability up to 80A.
3. R_DS(on): Low on-resistance of approximately 0.14 ohms at V_GS = 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, allowing for easy drive with standard gate voltages.
5. Thermal Performance: With a maximum junction temperature of 150°C, it offers robust thermal stability.
6. Package Type: Available in TO-220 and DPAK packages, facilitating easy heat dissipation.
7. Fast Switching: Suitable for high-frequency applications due to low gate charge (Q_g) and capacitance.
This MOSFET is ideal for applications in switch-mode power supplies, motor drives, and other high-efficiency power conversion tasks.
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 26A, with pulsed current capability up to 80A.
3. R_DS(on): Low on-resistance of approximately 0.14 ohms at V_GS = 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, allowing for easy drive with standard gate voltages.
5. Thermal Performance: With a maximum junction temperature of 150°C, it offers robust thermal stability.
6. Package Type: Available in TO-220 and DPAK packages, facilitating easy heat dissipation.
7. Fast Switching: Suitable for high-frequency applications due to low gate charge (Q_g) and capacitance.
This MOSFET is ideal for applications in switch-mode power supplies, motor drives, and other high-efficiency power conversion tasks.
Package
The STF26N60M2 is packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and handling capabilities.
Pinout
The STF26N60M2 is an N-channel MOSFET manufactured by STMicroelectronics. It typically comes in a TO-220 package, which has three pins.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is the output where the load connects. Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
In summary, the STF26N60M2 has 3 pins: Gate, Drain, and Source, serving fundamental functions in controlling electrical power in various applications.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is the output where the load connects. Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
In summary, the STF26N60M2 has 3 pins: Gate, Drain, and Source, serving fundamental functions in controlling electrical power in various applications.
Manufacturer
The STF26N60M2 is manufactured by STMicroelectronics, a prominent global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor solutions, including microcontrollers, power management devices, and analog products. The company serves various industries, including automotive, industrial, personal electronics, and communications. STMicroelectronics is recognized for its innovation in delivering advanced technologies and solutions, contributing to the growing demand for energy-efficient and high-performance electronic components.
Application
The STF26N60M2 is an N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies, DC-DC converters, and inverters. Its high voltage and current ratings make it suitable for industrial motor drives, lighting control, and automotive applications. Additionally, it can be utilized in telecom and renewable energy systems for efficient power management.
Equivalent
The STF26N60M2 is a high-voltage N-channel MOSFET. Equivalent products include:
1. STP26N60M2
2. IRF260N
3. FQP26N60
4. BUK7Y26-60E
5. MTP26N60E
Always verify specifications like V_DS, I_D, R_DS(on), and package type when considering substitutes.
1. STP26N60M2
2. IRF260N
3. FQP26N60
4. BUK7Y26-60E
5. MTP26N60E
Always verify specifications like V_DS, I_D, R_DS(on), and package type when considering substitutes.
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