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STF13N65M2

Name: STF13N65M2
Rating: 4.7 (12 reviews)

MOSFET N-CH 650V 10A TO220FP

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資料表 STF13N65M2 DataSheet
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規格

Supplier	STMicroelectronics
Package	Tube
Series	MDmesh™ M2
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	430mOhm @ 5A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	17 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	590 pF @ 100 V
PowerDissipation(Max)	25W (Tc)
OperatingTemperature	150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220FP

概述

Description

STF13N65M2 is STMicroelectronics’ 650 V, 13 A IGBT (N-channel) from the STF family. It uses trench-gate IGBT technology for fast switching and better efficiency, and includes an anti-parallel diode for free-wheeling in switching applications. The device is intended for power-conversion duties such as switch‑mode power supplies, motor drives, inverters, and UPS stages, where moderate-to-high voltage and current switching are needed. Gate drive is typically around 15 V, and it requires proper heat sinking and protection (diode, dv/dt, and safe‑operating-area considerations). The M2 suffix indicates the package family (ST’s M2 form factor); check the exact pinout and mounting style in the datasheet. For precise specs (Vce(sat), switching times, SOA, etc.), consult the official datasheet.

Features

STF13N65M2 is an STMicroelectronics N-channel enhancement-mode power MOSFET. Key features:
- VDS: 650 V
- ID: ~13 A (continuous)
- RDS(on): roughly 0.9–1.6 Ω (typical ranges depend on package and temperature; specified at VGS = 10 V)
- VGS(th): 2–4 V
- VGS(max): ±20 V
- Fast switching suitable for high-voltage switch-mode power supplies and similar apps
- Avalanche ruggedness and a robust SOA for reliability
- Operating temperature: -55°C to around 150°C (TJ max)
- Packaging: available in common power packages (TO-220, D²PAK/TO-263, DPAK/TO-252)
- Compliance: RoHS and standard ST quality/support
Note: exact RDS(on) and packaging options may vary by lot and variant; consult the current datasheet for precise specs.

Package

The STF13N65M2 is supplied in a TO-220AB (through‑hole) power package.

Pinout

Pin count: 3 external pins (Gate, Drain, Source) plus a metal mounting tab (tab tied to Drain for heatsinking).
Function: N‑channel enhancement‑mode power MOSFET (high‑voltage switching device, 650 V class, ~13 A rating) — Gate controls conduction between Drain and Source for use in SMPS, converters, and general high‑voltage switching applications.

Manufacturer

The STF13N65M2 is manufactured by STMicroelectronics. STMicroelectronics is a multinational integrated semiconductor manufacturer (IDM) that designs, makes and sells discrete and integrated semiconductor devices — including power MOSFETs, analog/mixed‑signal ICs, microcontrollers and sensors.

Application

STF13N65M2 is a 650 V, ~13 A fast-switching N-channel MOSFET. Applications: offline switch-mode power supplies/adapters and PFC front ends, high-voltage DC-DC converters, motor drives and inverters, solar (PV) inverters,UPS/rectifiers, and general telecom/industrial high-voltage switching tasks.

Equivalent

STF13N65M2 is a 650 V, ~13 A N‑channel power MOSFET. Equivalent devices are other 650 V N‑channel MOSFETs with similar Id, Rds(on), Qg and package — e.g.: STW13NM65 (ST), FDP13N65 (ON/Semiconductor/Fairchild families), IXFN13N65 (IXYS). Always cross‑check Vds, Id, Rds(on), gate charge and thermal/package specs before substituting.