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STF10N60M2
MOSFET N-CH 600V 7.5A TO220FP
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規格
| Series | MDmesh™ II Plus |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 100 V |
| Power Dissipation (Max) | 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | STF10 |
概述
Description
The STF10N60M2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications, primarily in power electronics. It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 10A. With a low on-resistance (R_DS(on)) of around 0.15Ω, it offers efficient switching performance, making it suitable for applications like power supplies, motor drives, and converters.
The device features a fast switching speed, which enhances efficiency in high-frequency operations, and is often used in conjunction with heat sinks to manage thermal performance. Its rugged design ensures reliable operation in harsh environments. The STF10N60M2 is housed in a TO-220 package, facilitating easy mounting and heat dissipation.
Overall, it is a versatile component ideal for engineers looking to optimize power management solutions in various electronic applications.
The device features a fast switching speed, which enhances efficiency in high-frequency operations, and is often used in conjunction with heat sinks to manage thermal performance. Its rugged design ensures reliable operation in harsh environments. The STF10N60M2 is housed in a TO-220 package, facilitating easy mounting and heat dissipation.
Overall, it is a versatile component ideal for engineers looking to optimize power management solutions in various electronic applications.
Features
The STF10N60M2 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 600V, allowing it to handle high-voltage circuits.
- Current Rating: 10A continuous drain current, suitable for a variety of applications.
- RDS(on): Low on-resistance (typically around 0.18Ω at VGS = 10V), which reduces conduction losses and improves efficiency.
- Gate Threshold Voltage: 2V to 4V, which ensures compatibility with low-voltage drive circuits.
- Fast Switching Speeds: Suitable for high-frequency applications due to rapid switching capability.
- Package: Available in TO-220 and DPAK packages, facilitating easy thermal management and assembly.
- Applications: Widely used in power supplies, inverters, and motor drives.
These features make the STF10N60M2 an excellent choice for energy-efficient designs in various electronic applications.
- Voltage Rating: 600V, allowing it to handle high-voltage circuits.
- Current Rating: 10A continuous drain current, suitable for a variety of applications.
- RDS(on): Low on-resistance (typically around 0.18Ω at VGS = 10V), which reduces conduction losses and improves efficiency.
- Gate Threshold Voltage: 2V to 4V, which ensures compatibility with low-voltage drive circuits.
- Fast Switching Speeds: Suitable for high-frequency applications due to rapid switching capability.
- Package: Available in TO-220 and DPAK packages, facilitating easy thermal management and assembly.
- Applications: Widely used in power supplies, inverters, and motor drives.
These features make the STF10N60M2 an excellent choice for energy-efficient designs in various electronic applications.
Package
The STF10N60M2 is typically packaged in a TO-220 format, which is a standard package type for power MOSFETs, allowing for efficient heat dissipation and easy mounting on heat sinks.
Pinout
The STF10N60M2 is a N-channel MOSFET with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the device. It is connected to the load.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit, allowing the current to flow from drain to source when the MOSFET is turned on.
The STF10N60M2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. It is commonly used in power management, switching applications, and inverters.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the device. It is connected to the load.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit, allowing the current to flow from drain to source when the MOSFET is turned on.
The STF10N60M2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. It is commonly used in power management, switching applications, and inverters.
Manufacturer
The STF10N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components, including integrated circuits, microcontrollers, sensors, and power management devices. The company serves various sectors, including automotive, industrial, consumer electronics, and telecommunications. Founded in 1987, STMicroelectronics operates in multiple countries and is known for its commitment to innovation and high-quality semiconductor solutions.
Application
The STF10N60M2 is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drives, and lighting systems. Its features make it suitable for switch-mode power supplies (SMPS), inverters, and converters, particularly in renewable energy systems like solar and wind. Additionally, it can be utilized in industrial automation and consumer electronics for efficient power management and control.
Equivalent
The STF10N60M2 is a MOSFET from STMicroelectronics with a voltage rating of 600V and a current rating of 10A. Equivalent products include:
1. IRF840 (International Rectifier)
2. BTA10-600V (STMicroelectronics)
3. MTP10N60E (ON Semiconductor)
4. FQP10N60 (Fairchild Semiconductor)
Always check specifications for exact compatibility in your application.
1. IRF840 (International Rectifier)
2. BTA10-600V (STMicroelectronics)
3. MTP10N60E (ON Semiconductor)
4. FQP10N60 (Fairchild Semiconductor)
Always check specifications for exact compatibility in your application.
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