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STE145N65M5
MOSFET N-CH 650V 143A ISOTOP
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規格
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 143A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 15mOhm @ 69A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 414 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 18500 pF @ 100 V |
| PowerDissipation(Max) | 679W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Chassis Mount |
| SupplierDevicePackage | ISOTOP® |
概述
Description
STE145N65M5 is STMicroelectronics’ high-voltage N-channel power MOSFET used for switching power electronics. It targets offline and high-voltage applications such as switched‑mode power supplies, PFC stages, inverters, and motor drives, where 650 V class devices are needed.
Key points:
- Voltage: VDSS ≈ 650 V; suitable for high-voltage topologies.
- Packaging: available in common power packages (e.g., TO‑220, D²PAK), depending on variant.
- Gate drive: VGS max typically ±20 V; drive commonly around 10–12 V for low Rds(on); ensure proper isolation and gate drive circuitry.
- Specs to review: Rds(on), ID continuous rating, total gate charge, switching speed, and avalanche ruggedness; thermal resistance and cooling requirements are important for reliability.
Use and safety:
- Ideal for high-voltage switch-mode power stages, inverters, and DC/DC converters.
- Requires proper heat sinking and isolation from mains.
For precise electrical specs, packaging, and latest data, consult the official STE145N65M5 datasheet on STMicroelectronics’ website.
Key points:
- Voltage: VDSS ≈ 650 V; suitable for high-voltage topologies.
- Packaging: available in common power packages (e.g., TO‑220, D²PAK), depending on variant.
- Gate drive: VGS max typically ±20 V; drive commonly around 10–12 V for low Rds(on); ensure proper isolation and gate drive circuitry.
- Specs to review: Rds(on), ID continuous rating, total gate charge, switching speed, and avalanche ruggedness; thermal resistance and cooling requirements are important for reliability.
Use and safety:
- Ideal for high-voltage switch-mode power stages, inverters, and DC/DC converters.
- Requires proper heat sinking and isolation from mains.
For precise electrical specs, packaging, and latest data, consult the official STE145N65M5 datasheet on STMicroelectronics’ website.
Package
D²PAK (TO-263) surface-mount package.
Pinout
STE145N65M5 is a power MOSFET (N-channel, enhancement mode). Pin count: 3 functional pins (Gate, Drain, Source). The Drain is also connected to the package tab, so the tab serves as the Drain connection as well. Used as a high-voltage switching device.
Manufacturer
The STE145N65M5 is manufactured by STMicroelectronics. STMicroelectronics is a multinational semiconductor company (Franco‑Italian, headquartered in Geneva) that designs and manufactures a broad range of semiconductor products — including microcontrollers, analog and power devices, sensors, and discrete components — for automotive, industrial, consumer, and communications markets.
Application
STE145N65M5 is a high-voltage N-channel MOSFET (≈650 V). Common applications:
- Switch-mode power supplies (SMPS), flyback/buck/boost topologies and PFC
- Motor drives and industrial power switches
- Solar inverters and energy-storage inverters
- Uninterruptible power supplies (UPS) and telecom power modules
- High-voltage DC-DC converters in consumer/enterprise equipment
- Switch-mode power supplies (SMPS), flyback/buck/boost topologies and PFC
- Motor drives and industrial power switches
- Solar inverters and energy-storage inverters
- Uninterruptible power supplies (UPS) and telecom power modules
- High-voltage DC-DC converters in consumer/enterprise equipment
Equivalent
STE145N65M5 is a 650 V N‑channel power MOSFET. Equivalent replacements are other 650 V N‑channel MOSFETs with matching VDS, RDS(on), continuous current, Qg and package—e.g. comparable parts from Infineon, Vishay, ON Semiconductor or ROHM. Always cross‑check VDS, RDS(on), Id, VGS limits, switching charge and thermal ratings on the datasheet before substituting.
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