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STD80N6F7
MOSFET N-CH 60V 40A DPAK
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規格
| Series | STripFET™ F7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 30 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | STD80 |
概述
Description
The STD80N6F7 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for high-speed switching applications and is commonly used in power management circuits, motor control, and DC-DC converters. The device features a low on-resistance, which minimizes power loss during operation, contributing to higher efficiency.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 80A, and a gate threshold voltage (V_GS(th)) typically between 2V and 4V. It operates effectively over a wide range of temperatures and has a robust package design for improved thermal performance.
The STD80N6F7 is ideal for applications requiring high current handling and fast switching speeds, making it a popular choice in automotive, industrial, and consumer electronics. Its reliability and efficiency are critical for modern electronic designs. For detailed characteristics and application guidelines, refer to the manufacturer's datasheet.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 80A, and a gate threshold voltage (V_GS(th)) typically between 2V and 4V. It operates effectively over a wide range of temperatures and has a robust package design for improved thermal performance.
The STD80N6F7 is ideal for applications requiring high current handling and fast switching speeds, making it a popular choice in automotive, industrial, and consumer electronics. Its reliability and efficiency are critical for modern electronic designs. For detailed characteristics and application guidelines, refer to the manufacturer's datasheet.
Features
The STD80N6F7 is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V.
2. Current Rating: The continuous drain current (ID) is rated at 80A, making it suitable for high current applications.
3. RDS(on): The on-resistance (RDS(on)) is low, typically around 6.5 mΩ, which helps in reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 1V to 2.5V, ensuring compatibility with low-voltage drive circuits.
5. Packaging: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The device features fast switching speeds, which are beneficial for high-frequency applications.
7. Temperature Range: It operates effectively in a wide temperature range, enhancing reliability.
These features make the STD80N6F7 suitable for various applications, including power supplies, motor drives, and DC-DC converters.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V.
2. Current Rating: The continuous drain current (ID) is rated at 80A, making it suitable for high current applications.
3. RDS(on): The on-resistance (RDS(on)) is low, typically around 6.5 mΩ, which helps in reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 1V to 2.5V, ensuring compatibility with low-voltage drive circuits.
5. Packaging: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The device features fast switching speeds, which are beneficial for high-frequency applications.
7. Temperature Range: It operates effectively in a wide temperature range, enhancing reliability.
These features make the STD80N6F7 suitable for various applications, including power supplies, motor drives, and DC-DC converters.
Package
The STD80N6F7 is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power transistors in various applications.
Pinout
The STD80N6F7 is a power MOSFET from STMicroelectronics, specifically designed for use in power conversion applications. It typically features a TO-220 package, which has a pin count of three.
The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off by applying a voltage.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the device or circuit being powered.
3. Source (S): This pin is where the current exits the MOSFET, typically connected to ground or the power supply.
The STD80N6F7 is rated for a maximum drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of 80A, making it suitable for high-efficiency applications in power management and switching circuits.
The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off by applying a voltage.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the device or circuit being powered.
3. Source (S): This pin is where the current exits the MOSFET, typically connected to ground or the power supply.
The STD80N6F7 is rated for a maximum drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of 80A, making it suitable for high-efficiency applications in power management and switching circuits.
Manufacturer
The STD80N6F7 is a power MOSFET manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland. It specializes in designing and manufacturing a wide range of semiconductor products, including analog, digital, and mixed-signal devices. The company serves various sectors, such as automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in power management solutions and has a strong focus on sustainability and energy efficiency in its product offerings.
Application
The STD80N6F7 is an N-channel MOSFET commonly used in various applications, including power management, motor control, DC-DC converters, and switching power supplies. Its high current and voltage ratings make it suitable for automotive systems, industrial equipment, and renewable energy systems like solar inverters. Additionally, it finds use in consumer electronics for efficient power switching and thermal management.
Equivalent
Equivalent products to the STD80N6F7 MOSFET include the STP80N6F7, NTD80N6F7, and IRF3205. When selecting a replacement, ensure that the voltage, current ratings, and gate threshold voltage match the application requirements. Always verify specifications from the manufacturer's datasheets for compatibility.
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