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STD80N4F6
MOSFET N-CH 40V 80A DPAK
- 製造商
- 製造商。 部分 #STD80N4F6
- 包 TO-252-3,DPAK(2Leads+Tab),SC-63
- 資料表 STD80N4F6 DataSheet
- 有現貨的4144
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 6mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2150 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
概述
Description
The STD80N4F6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 80V and a continuous drain current capability of 80A, making it suitable for high-power switching applications. The "4F" in its designation typically indicates enhanced features such as lower on-resistance (Rds(on)), which reduces power loss and improves efficiency in circuits.
With a fast switching speed, it is widely used in power supplies, motor drivers, and various industrial applications. Its thermal performance allows for efficient heat dissipation, ensuring reliability in demanding environments. The STD80N4F6 is often packaged in a TO-220 or similar configuration, facilitating easy integration into electronic designs.
Engineers favor this MOSFET for its robustness, efficiency, and versatility in various applications, from automotive to renewable energy systems.
With a fast switching speed, it is widely used in power supplies, motor drivers, and various industrial applications. Its thermal performance allows for efficient heat dissipation, ensuring reliability in demanding environments. The STD80N4F6 is often packaged in a TO-220 or similar configuration, facilitating easy integration into electronic designs.
Engineers favor this MOSFET for its robustness, efficiency, and versatility in various applications, from automotive to renewable energy systems.
Features
The STD80N4F6 is an N-channel MOSFET from STMicroelectronics, featuring a voltage rating of 40V and a continuous drain current of 80A. Key characteristics include a low on-resistance (RDS(on)) of approximately 4.6 mΩ, which enhances efficiency in power applications. It has a maximum gate-source voltage of ±20V, supporting robust switching performance. Additionally, the device supports fast switching speeds, making it suitable for applications like power converters, motor drives, and power management systems.
The STD80N4F6 is housed in a DPAK package, ensuring effective heat dissipation due to its large surface area. Its thermal resistance is optimized for high-performance applications, and it is designed for ease of integration in various electronic circuits. Overall, the STD80N4F6 is ideal for applications requiring high efficiency and reliability in compact designs.
The STD80N4F6 is housed in a DPAK package, ensuring effective heat dissipation due to its large surface area. Its thermal resistance is optimized for high-performance applications, and it is designed for ease of integration in various electronic circuits. Overall, the STD80N4F6 is ideal for applications requiring high efficiency and reliability in compact designs.
Package
The STD80N4F6 is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The STD80N4F6 is an N-channel MOSFET from the STMicroelectronics family, primarily used in power applications. It has a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G) - Controls the MOSFET's switching; applying a voltage here turns the device on or off.
2. Drain (D) - The terminal through which the current exits the MOSFET when it is on.
3. Source (S) - The terminal through which the current enters the MOSFET; typically connected to ground in low-side switching applications.
4. Body Diode - Internal diode between the Drain and Source allows current to flow in reverse direction when the MOSFET is off.
5. Tab (or Heat Sink) - Not a pin but used for heat dissipation; often connected to the Source.
This device is suitable for applications such as DC-DC converters, motor drives, and other power management systems. It features low on-resistance and high-speed switching capabilities.
1. Gate (G) - Controls the MOSFET's switching; applying a voltage here turns the device on or off.
2. Drain (D) - The terminal through which the current exits the MOSFET when it is on.
3. Source (S) - The terminal through which the current enters the MOSFET; typically connected to ground in low-side switching applications.
4. Body Diode - Internal diode between the Drain and Source allows current to flow in reverse direction when the MOSFET is off.
5. Tab (or Heat Sink) - Not a pin but used for heat dissipation; often connected to the Source.
This device is suitable for applications such as DC-DC converters, motor drives, and other power management systems. It features low on-resistance and high-speed switching capabilities.
Manufacturer
The STD80N4F6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor devices, including integrated circuits, microcontrollers, and power management solutions. The company operates in various sectors, including consumer electronics, automotive, industrial automation, and telecommunications. STMicroelectronics is known for its innovation in technology and commitment to sustainability, focusing on developing products that enhance energy efficiency and performance.
Application
The STD80N4F6 is an N-channel MOSFET commonly used in power applications such as motor drives, power supplies, and DC-DC converters. Its high voltage and current handling capabilities make it suitable for automotive, industrial, and renewable energy applications. Additionally, it is used in consumer electronics for efficient power management and switching.
Equivalent
The STD80N4F6 is an N-channel MOSFET from STMicroelectronics. Equivalent products include the IRF3205, AOD3205, and FDBL80N4F6. Always verify specifications like V_DS, I_D, R_DS(on), and package type to ensure compatibility in your application.
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