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STD4N62K3
MOSFET N-CH 620V 3.8A DPAK
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規格
| Series | SuperMESH3™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 620 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 50 V |
| Power Dissipation (Max) | 70W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | STD4N62 |
概述
Description
STD4N62K3 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a maximum drain-source voltage (V_DS) of 620 volts and a continuous drain current (I_D) of approximately 4 amps, making it suitable for power switching in applications such as power supplies, inverters, and motor drivers.
The device offers low on-resistance (R_DS(on)), which improves efficiency by minimizing power loss during operation. Its gate threshold voltage (V_GS(th)) allows it to be driven easily by standard logic levels. Additionally, the STD4N62K3 typically provides fast switching speeds, which enhances performance in high-frequency applications.
The packaging and thermal characteristics of this MOSFET also contribute to its reliability and ease of integration into circuits. Overall, the STD4N62K3 is a versatile component widely used in various electronic designs requiring efficient power management.
The device offers low on-resistance (R_DS(on)), which improves efficiency by minimizing power loss during operation. Its gate threshold voltage (V_GS(th)) allows it to be driven easily by standard logic levels. Additionally, the STD4N62K3 typically provides fast switching speeds, which enhances performance in high-frequency applications.
The packaging and thermal characteristics of this MOSFET also contribute to its reliability and ease of integration into circuits. Overall, the STD4N62K3 is a versatile component widely used in various electronic designs requiring efficient power management.
Features
The STD4N62K3 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 620V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 4A, allowing it to handle moderate power loads.
3. On-Resistance: Offers a low on-resistance (R_DS(on)) of around 1.8 Ohms at a gate-source voltage (V_GS) of 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, indicating the voltage needed to start turning the MOSFET on.
5. Package Type: It is typically available in a TO-220 package, providing effective heat dissipation for reliable performance.
6. Fast Switching: Designed for efficient switching, making it suitable for various applications including switch-mode power supplies and motor drivers.
These features make the STD4N62K3 a versatile choice for various electronic circuits requiring high voltage and moderate current handling.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 620V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 4A, allowing it to handle moderate power loads.
3. On-Resistance: Offers a low on-resistance (R_DS(on)) of around 1.8 Ohms at a gate-source voltage (V_GS) of 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, indicating the voltage needed to start turning the MOSFET on.
5. Package Type: It is typically available in a TO-220 package, providing effective heat dissipation for reliable performance.
6. Fast Switching: Designed for efficient switching, making it suitable for various applications including switch-mode power supplies and motor drivers.
These features make the STD4N62K3 a versatile choice for various electronic circuits requiring high voltage and moderate current handling.
Package
The STD4N62K3 is typically packaged in a TO-220 format. This package type is known for its good thermal performance and robust design, making it suitable for high-power applications.
Pinout
The STD4N62K3 is a high-voltage N-channel MOSFET with a pin count of 3. Its pin configuration typically includes:
1. Gate (G): This terminal controls the MOSFET and is used to turn it on or off.
2. Drain (D): The main current-carrying terminal where the load is connected.
3. Source (S): The terminal that is connected to the ground or the negative side of the power supply.
The STD4N62K3 is designed for applications that require high-voltage handling (up to 620V) and high current (up to 4A), making it suitable for use in power supplies, motor controls, and similar applications. Its low on-resistance and high efficiency contribute to better performance in switching applications.
1. Gate (G): This terminal controls the MOSFET and is used to turn it on or off.
2. Drain (D): The main current-carrying terminal where the load is connected.
3. Source (S): The terminal that is connected to the ground or the negative side of the power supply.
The STD4N62K3 is designed for applications that require high-voltage handling (up to 620V) and high current (up to 4A), making it suitable for use in power supplies, motor controls, and similar applications. Its low on-resistance and high efficiency contribute to better performance in switching applications.
Manufacturer
The STD4N62K3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including power management devices, microcontrollers, and sensors. The company serves various sectors, including automotive, industrial, personal electronics, and communications. Founded in 1987, STMicroelectronics has a strong focus on innovation and sustainability, contributing to advancements in technology and promoting energy-efficient solutions. It operates worldwide, with a significant presence in Europe, Asia, and the Americas.
Application
The STD4N62K3 is a power MOSFET primarily used in applications such as power supplies, motor control, and automotive systems. Its high voltage and current ratings make it suitable for switching and amplification in power converters, inverters, and energy management systems. Additionally, it can be utilized in industrial automation and lighting control due to its efficiency and thermal stability.
Equivalent
The STD4N62K3 is a N-channel MOSFET. Equivalent products include the IRF240, IRF260, and MTP4N60E3. However, always check the specific parameters such as voltage, current ratings, RDS(on), and package type to ensure compatibility for your application.
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