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STD18N65M5
MOSFET N-CH 650V 15A DPAK
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規格
| Series | MDmesh™ V |
| Part Status | Active |
| Base Product Number | STD18 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
The STD18N65M5 is a high-voltage N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (V_DS) of 650V, enabling it to handle high-voltage environments efficiently. With a maximum continuous drain current (I_D) of 18A, it is suitable for applications such as power supplies, motor drives, and industrial equipment.
The MOSFET is built using advanced technology that offers low on-resistance (R_DS(on)), which minimizes power losses during operation, improving overall efficiency. Additionally, it has a fast switching speed, making it ideal for high-frequency applications.
The STD18N65M5 also includes a high-temperature capability, allowing it to operate effectively in demanding conditions. Its package is designed for easy mounting and thermal dissipation, enhancing reliability in various circuits.
Overall, the STD18N65M5 is a versatile MOSFET that balances performance, efficiency, and thermal management, making it a preferred choice for engineers in power electronic design.
The MOSFET is built using advanced technology that offers low on-resistance (R_DS(on)), which minimizes power losses during operation, improving overall efficiency. Additionally, it has a fast switching speed, making it ideal for high-frequency applications.
The STD18N65M5 also includes a high-temperature capability, allowing it to operate effectively in demanding conditions. Its package is designed for easy mounting and thermal dissipation, enhancing reliability in various circuits.
Overall, the STD18N65M5 is a versatile MOSFET that balances performance, efficiency, and thermal management, making it a preferred choice for engineers in power electronic design.
Features
The STD18N65M5 is a N-channel MOSFET designed for high voltage and high current applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (ID) of up to 18A, providing robust performance in power circuits.
3. On-Resistance (RDS(on)): It offers a low on-resistance of approximately 0.25 ohm at a gate-source voltage (VGS) of 10V, ensuring efficient power management and reduced heat generation.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage is around 2-4V, allowing for easy driving with standard gate voltages.
5. Package: It typically comes in a TO-220 package, suitable for heatsinking and thermal management.
6. Applications: Ideal for use in switching power supplies, motor drives, and other high-efficiency power conversion applications.
Overall, the STD18N65M5 is well-suited for demanding power electronics applications requiring high efficiency and reliability.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (ID) of up to 18A, providing robust performance in power circuits.
3. On-Resistance (RDS(on)): It offers a low on-resistance of approximately 0.25 ohm at a gate-source voltage (VGS) of 10V, ensuring efficient power management and reduced heat generation.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage is around 2-4V, allowing for easy driving with standard gate voltages.
5. Package: It typically comes in a TO-220 package, suitable for heatsinking and thermal management.
6. Applications: Ideal for use in switching power supplies, motor drives, and other high-efficiency power conversion applications.
Overall, the STD18N65M5 is well-suited for demanding power electronics applications requiring high efficiency and reliability.
Package
The STD18N65M5 is typically packaged in a TO-220 or DPAK format. These packages are designed for efficient thermal management and allow for easy mounting on heatsinks.
Pinout
The STD18N65M5 is an N-channel MOSFET with a total of 6 pins. Its pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The terminal through which current flows out when the device is on.
3. Source (S) - The terminal through which current flows into the device.
The specific arrangement of these pins may vary based on the package type (e.g., TO-220, TO-247). The STD18N65M5 is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 18A at a specified case temperature. Its applications include power supplies, motor drives, and other high-power switching applications.
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The terminal through which current flows out when the device is on.
3. Source (S) - The terminal through which current flows into the device.
The specific arrangement of these pins may vary based on the package type (e.g., TO-220, TO-247). The STD18N65M5 is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 18A at a specified case temperature. Its applications include power supplies, motor drives, and other high-power switching applications.
Manufacturer
The STD18N65M5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in the design and production of a wide range of semiconductor devices, including integrated circuits and discrete components. The company serves multiple sectors, such as automotive, industrial, personal electronics, and communication equipment. STMicroelectronics is known for its innovation in power management, microcontrollers, and sensors, contributing significantly to the development of various electronic applications.
Application
The STD18N65M5 is a N-channel MOSFET commonly used in high-voltage applications such as power supplies, motor drivers, and DC-DC converters. Its features make it suitable for switch-mode power supplies (SMPS), electric vehicles, and renewable energy systems like solar inverters. Additionally, it is utilized in industrial automation and power management solutions.
Equivalent
The STD18N65M5 is a MOSFET from STMicroelectronics. Equivalent products include the Infineon BSC18-65N and the Nexperia PSMN2R8-80BS. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.
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