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STB37N60DM2AG

Name: STB37N60DM2AG
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 28A D2PAK

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包 TO-263-3
資料表 STB37N60DM2AG DataSheet
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規格

Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101, MDmesh™ DM2
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	110mOhm @ 14A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	54 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	2400 pF @ 100 V
PowerDissipation(Max)	210W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK (TO-263)

概述

Description

The STB37N60DM2AG is a high-voltage N-channel MOSFET designed for power management applications. It features a voltage rating of 600V and a continuous drain current of 37A, making it suitable for applications such as motor drives, power supplies, and other high-power switching applications. The device is known for its low on-resistance (RDS(on)), which minimizes power loss and improves efficiency.
This MOSFET is part of STMicroelectronics' MDmesh technology, which enhances performance in terms of switching speed and thermal stability. Additionally, it offers low gate charge, facilitating easier driving and lower energy loss during operation. The package is typically a TO-220 or similar, providing good thermal performance for heat dissipation.
Applications include industrial equipment, automotive systems, and renewable energy systems. Overall, the STB37N60DM2AG is a reliable choice for designers looking to optimize power efficiency and thermal management in high-voltage applications.

Features

The STB37N60DM2AG is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V, making it suitable for high-voltage circuits.
2. Current Rating: Continuous drain current of 37A, providing substantial power handling capability.
3. RDS(on): Low on-resistance (typically 0.20 ohms), which reduces conduction losses.
4. Gate Threshold Voltage: VGS(th) between 2V and 4V, ensuring efficient switching.
5. Package: Available in a TO-220 package, facilitating heat dissipation.
6. Fast Switching Speed: Optimized for fast switching applications, enhancing efficiency in power converters.
7. Robustness: Integrated with a built-in diodes, suitable for inductive load switching.
8. Applications: Commonly used in power supplies, motor drivers, and other power management systems.
This MOSFET is ideal for industrial and consumer electronic applications requiring reliable performance under high voltage conditions.

Package

The STB37N60DM2AG is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for high-power applications in electronics.

Pinout

The STB37N60DM2AG is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D) - This is the pin where the current enters the MOSFET. It connects to the load that the MOSFET controls.

3. Source (S) - This pin is the output where the current exits the MOSFET. It typically connects to ground in low-side switching applications.
The STB37N60DM2AG is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 37A, making it suitable for various power management applications.

Manufacturer

The STB37N60DM2AG is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs and manufactures a wide range of semiconductor products, including power management devices, microcontrollers, sensors, and analog ICs. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. Known for its innovation and commitment to sustainability, STMicroelectronics plays a key role in advancing technologies such as Internet of Things (IoT), automation, and energy efficiency.

Application

The STB37N60DM2AG is an N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies (SMPS), motor drives, and DC-DC converters. Its high voltage and current rating make it suitable for applications in industrial automation, renewable energy systems, and automotive electronics. Additionally, it's utilized in lighting control and various consumer electronics where efficient switching is required.

Equivalent

The STB37N60DM2AG is a N-channel MOSFET. Equivalent products include:
1. STP37N60M2
2. IRFHC37N60
3. FDP37N60
4. BUK7M37-60E
Always check specifications such as RDS(on), VDS, and ID ratings to ensure compatibility.