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SQJA82EP-T1_GE3

Name: SQJA82EP-T1_GE3
Rating: 4.7 (12 reviews)

MOSFET N-CH 80V 60A PPAK SO-8

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資料表 SQJA82EP-T1_GE3 DataSheet
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規格

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101, TrenchFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	80 V
Current-ContinuousDrain(Id)@25°C	60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	8.2mOhm @ 10A, 10V
Vgs(th)(Max)@Id	2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	60 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	3000 pF @ 25 V
PowerDissipation(Max)	68W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PowerPAK® SO-8

概述

Description

The SQJA82EP-T1_GE3 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for various applications, including DC-DC converters, power supplies, and motor drivers. This MOSFET can handle high current levels while maintaining low power losses, enhancing overall efficiency in electronic circuits.
With a maximum drain-source voltage (V_DS) rating of 82V and a continuous drain current (I_D) rating of up to 40A, it provides robust performance in demanding conditions. The device is housed in a TO-220 package, facilitating effective heat dissipation.
Its gate threshold voltage (V_GS(th)) allows for compatibility with standard logic-level signal levels, simplifying drive circuit requirements. Overall, the SQJA82EP-T1_GE3 is an excellent choice for engineers looking to optimize power efficiency and thermal management in their designs.

Features

The SQJA82EP-T1_GE3 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 80V.
2. Current Capacity: Allows for a continuous drain current (I_D) of up to approximately 82A, making it suitable for high-power applications.
3. Low R_DS(on): It boasts a low on-resistance, which minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching: Optimized for fast switching speeds, beneficial for high-frequency applications.
5. Thermal Performance: Good thermal characteristics support high power dissipation, ensuring reliability under load.
6. Package Type: Usually available in TO-220 or similar packages, facilitating easy heat dissipation and mounting.
These features make the SQJA82EP-T1_GE3 ideal for use in power supplies, motor drives, and other applications requiring efficient switching performance.

Package

The SQJA82EP-T1_GE3 is packaged in a TO-220 housing type. This package is designed for efficient heat dissipation and is commonly used for power transistors and other high-power applications.

Pinout

The SQJA82EP-T1_GE3 is a power MOSFET with a total of 8 pins. It is designed for high-efficiency applications and can handle high voltage and current. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load and carries the current.
3. Source (S) - Connects to the ground or the negative side of the power supply.
The specific functions of each pin are as follows:
- Pins 1, 2, 3, 4: Gate, Drain, and Source connections.
- Pins 5, 6, 7, 8: Additional drain and source connections, providing options for layout and thermal management in circuit designs.
The SQJA82EP-T1_GE3 is characterized by low R_DS(on) and fast switching speeds, making it suitable for various applications such as power supplies, DC-DC converters, and motor drivers. Always refer to the datasheet for detailed specifications and connections.

Manufacturer

The SQJA82EP-T1_GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its broad portfolio of products, including diodes, MOSFETs, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay's components are widely used in electronic devices and systems, emphasizing innovation and high performance.

Application

The SQJA82EP-T1_GE3 is a high-performance N-channel MOSFET used in various applications including power management, automotive systems, DC-DC converters, and motor control. Its low R_DS(on) and fast switching capabilities make it suitable for efficient power handling in consumer electronics, industrial automation, and renewable energy systems.

Equivalent

The SQJA82EP-T1_GE3 is a MOSFET featuring a low on-resistance and fast switching capabilities. Equivalent products include the BSS138, IRLZ44N, and AOD4184. Always verify the specific ratings and characteristics like voltage, current, and package type to ensure compatibility in your application.