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SQD50P08-25L_GE3
MOSFET P-CH 80V 50A TO252AA
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規格
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5350 pF @ 25 V |
| Power Dissipation (Max) | 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | SQD50 |
概述
Description
The SQD50P08-25L_GE3 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications requiring efficient power management and control. It features a low on-state resistance, which reduces power loss and enhances efficiency in switching operations. This MOSFET is typically used in applications like DC-DC converters, load switches, and battery protection circuits.
Key specifications include a maximum drain-source voltage (V_DS) of -80V and a continuous drain current (I_D) of up to -50A, making it suitable for medium- to high-power applications. Its gate-source voltage (V_GS) range is typically ±20V, allowing for robust operation in different environments.
The SQD50P08-25L_GE3 is housed in a TO-252 package, which helps in efficient heat dissipation and compact installation on PCBs. Its low gate charge and fast switching speed contribute to improved overall system performance.
This MOSFET is manufactured by Vishay Siliconix and is designed to meet the demands of modern electronic systems in terms of reliability, performance, and energy efficiency.
Key specifications include a maximum drain-source voltage (V_DS) of -80V and a continuous drain current (I_D) of up to -50A, making it suitable for medium- to high-power applications. Its gate-source voltage (V_GS) range is typically ±20V, allowing for robust operation in different environments.
The SQD50P08-25L_GE3 is housed in a TO-252 package, which helps in efficient heat dissipation and compact installation on PCBs. Its low gate charge and fast switching speed contribute to improved overall system performance.
This MOSFET is manufactured by Vishay Siliconix and is designed to meet the demands of modern electronic systems in terms of reliability, performance, and energy efficiency.
Features
The SQD50P08-25L_GE3 is a P-channel MOSFET manufactured by Vishay/Siliconix. Key features of this component include:
1. P-Channel MOSFET: It is designed for applications requiring P-channel operation.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of -80V and a continuous drain current (I_D) of up to -50A.
3. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
4. Package Type: It is available in a TO-252 package, facilitating easy installation in various circuit boards.
5. Applications: Suitable for use in power management applications, load switching, and DC-DC converters.
6. Thermal Performance: Designed for efficient thermal performance, supporting robust operation under varying thermal conditions.
7. Enhanced Switching Speeds: Offers fast switching capabilities, which is beneficial for high-frequency applications.
These characteristics make the SQD50P08-25L_GE3 a versatile choice for designers looking to implement efficient and reliable power management solutions in their electronic projects.
1. P-Channel MOSFET: It is designed for applications requiring P-channel operation.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of -80V and a continuous drain current (I_D) of up to -50A.
3. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
4. Package Type: It is available in a TO-252 package, facilitating easy installation in various circuit boards.
5. Applications: Suitable for use in power management applications, load switching, and DC-DC converters.
6. Thermal Performance: Designed for efficient thermal performance, supporting robust operation under varying thermal conditions.
7. Enhanced Switching Speeds: Offers fast switching capabilities, which is beneficial for high-frequency applications.
These characteristics make the SQD50P08-25L_GE3 a versatile choice for designers looking to implement efficient and reliable power management solutions in their electronic projects.
Package
The SQD50P08-25L_GE3 is a P-channel MOSFET, and it typically comes in a TO-252 (DPAK) package type.
Pinout
The SQD50P08-25L_GE3 is a P-channel MOSFET. It typically comes in a TO-252 (DPAK) package, which has three pins and a tab. The pin configuration is as follows:
1. Gate (G): This pin is responsible for turning the MOSFET on and off by applying a voltage.
2. Drain (D): This pin is connected to the load, and the current flows out from the drain when the MOSFET is on.
3. Source (S): This is the input pin for the current, where the current enters the MOSFET.
Additionally, the tab or the large metal part in the TO-252 package is often connected internally to the drain for better heat dissipation. The device is typically used for switching applications and efficient power management in circuits.
1. Gate (G): This pin is responsible for turning the MOSFET on and off by applying a voltage.
2. Drain (D): This pin is connected to the load, and the current flows out from the drain when the MOSFET is on.
3. Source (S): This is the input pin for the current, where the current enters the MOSFET.
Additionally, the tab or the large metal part in the TO-252 package is often connected internally to the drain for better heat dissipation. The device is typically used for switching applications and efficient power management in circuits.
Manufacturer
The SQD50P08-25L_GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products including MOSFETs, resistors, capacitors, inductors, diodes, and more. Vishay serves various markets such as automotive, industrial, consumer electronics, telecommunications, military, aerospace, and medical. The company's components are critical to the design and functionality of electronic devices and systems.
Application
The SQD50P08-25L_GE3 is a P-channel MOSFET commonly used in applications requiring efficient power management and switching. Its typical application areas include DC-DC converters, load switches, battery management systems, and motor control circuits. It is well-suited for automotive, industrial, and consumer electronics where low on-resistance and high current handling capabilities are essential.
Equivalent
The SQD50P08-25L_GE3 is a P-channel MOSFET from Vishay. Equivalent products might include similar P-channel MOSFETs with comparable voltage and current ratings from other manufacturers such as the FQP27P06 from ON Semiconductor, the IRF4905 from Infineon, and the STP55PF06 from STMicroelectronics. Always verify the datasheets for exact specifications and pin compatibility.
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