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SPW35N60CFD
MOSFETs N-Ch 600V 34.1A TO247-3 CoolMOS CFD
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| Packaging | Tube |
| Standard Pack Qty | 240 |
概述
Description
The SPW35N60CFD is a high-voltage N-channel MOSFET designed for efficient power switching applications. It features a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) rating of 35A, and a low gate threshold voltage, allowing for effective control in high-power circuits. The device is constructed using advanced technology that ensures low on-resistance (R_DS(on)), which minimizes conduction losses and improves overall efficiency.
Key characteristics include fast switching speeds, making it suitable for applications such as power supplies, motor drives, and converters. The SPW35N60CFD typically comes in a TO-220 package, providing adequate thermal management for high-power dissipation. Its robust design also includes built-in protection features that enhance reliability in demanding environments.
Engineers and designers favor this MOSFET for its combination of high performance, reliability, and cost-effectiveness in industrial, automotive, and consumer electronics applications.
Key characteristics include fast switching speeds, making it suitable for applications such as power supplies, motor drives, and converters. The SPW35N60CFD typically comes in a TO-220 package, providing adequate thermal management for high-power dissipation. Its robust design also includes built-in protection features that enhance reliability in demanding environments.
Engineers and designers favor this MOSFET for its combination of high performance, reliability, and cost-effectiveness in industrial, automotive, and consumer electronics applications.
Features
The SPW35N60CFD is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 35A, allowing for robust performance in demanding environments.
3. Low On-Resistance: Features a low on-resistance (R_DS(on)) of around 0.35Ω at V_GS = 10V, contributing to reduced power losses during operation.
4. Fast Switching Speed: Optimized for high-speed switching, enhancing efficiency in power conversion applications.
5. Thermal Performance: Designed with a TO-220 package, ensuring good thermal dissipation for reliable operation.
6. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various gate drive voltages.
These features make the SPW35N60CFD suitable for applications in power supplies, motor drives, and industrial equipment.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 35A, allowing for robust performance in demanding environments.
3. Low On-Resistance: Features a low on-resistance (R_DS(on)) of around 0.35Ω at V_GS = 10V, contributing to reduced power losses during operation.
4. Fast Switching Speed: Optimized for high-speed switching, enhancing efficiency in power conversion applications.
5. Thermal Performance: Designed with a TO-220 package, ensuring good thermal dissipation for reliable operation.
6. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various gate drive voltages.
These features make the SPW35N60CFD suitable for applications in power supplies, motor drives, and industrial equipment.
Package
The SPW35N60CFD is typically packaged in a TO-220 format, which is a type of metal package that provides good thermal performance and is suitable for high-power applications. The TO-220 package allows for efficient heat dissipation and easy mounting on heatsinks.
Pinout
The SPW35N60CFD is a power MOSFET with a pin count of 4. Its pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
4. Tab/Heatsink (optional): Often used for mounting and heat dissipation.
The device is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 35A. It features low on-resistance (R_DS(on)), which reduces power losses during operation, making it suitable for applications such as power supplies, motor drives, and lighting control.
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
4. Tab/Heatsink (optional): Often used for mounting and heat dissipation.
The device is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 35A. It features low on-resistance (R_DS(on)), which reduces power losses during operation, making it suitable for applications such as power supplies, motor drives, and lighting control.
Manufacturer
The SPW35N60CFD is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is headquartered in Neubiberg, Germany, and specializes in power semiconductors, microcontrollers, and sensor technologies. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and sustainability. Infineon is known for its innovation in power management and provides products that enable efficient energy use in a wide range of applications.
Application
The SPW35N60CFD is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its application areas include switch-mode power supplies, motor drivers, and high-efficiency converters. It is suitable for industrial, automotive, and consumer electronics where efficient power switching and thermal management are essential. Additionally, it is used in inverters, LED drivers, and other high-frequency applications.
Equivalent
The SPW35N60CFD is an N-channel MOSFET with a voltage rating of 600V and a current rating of 35A. Equivalent products include the IRFHC35N60, STP35NF60, and MTP35N60. Always check the specific datasheets for exact specifications, gate thresholds, and thermal characteristics to ensure compatibility in your application.
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