SPP12N50C3

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SPP12N50C3

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規格

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS C3
Factory Pack Quantity:Factory Pack Quantity 500
Subcategory Transistors
Part # Aliases SPP12N5C3XK SP000014459 SPP12N50C3HKSA1
Shipping Restrictions Mouser does not presently sell this product in your region.
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 15.65 mm
Length 10 mm
Width 4.4 mm
Unit Weight 0.068784 oz
Package / Case TO-220-3
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 11.6 A
Rds On - Drain-Source Resistance 380 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Pd - Power Dissipation 125 W
Channel Mode Enhancement
Fall Time 8 ns
Rise Time 8 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 10 ns

概述

Description

The SPP12N50C3 is a high-voltage N-channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) rating of 12A, making it suitable for use in various power electronics, including inverters, converters, and motor drives.
Key features of the SPP12N50C3 include low on-resistance (Rds(on)), which ensures efficient operation and reduced heat generation, and fast switching capabilities that enhance the performance in high-frequency applications. The device is housed in a TO-220 package, ensuring good thermal dissipation.
Applications typically involve industrial equipment, power supplies, and automotive systems where high power handling and reliability are crucial. Proper heat management and device selection are essential to ensure optimal performance in any application.

Features

The SPP12N50C3 is a power MOSFET known for its high voltage and current capabilities. Key features include:
1. Voltage Rating: Capable of handling high voltages up to 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain currents of up to 12A, enabling it to manage substantial power loads.
3. Low On-Resistance (RDS(on)): Typically around 0.55Ω, which minimizes power loss and improves efficiency during operation.
4. Fast Switching Speed: Designed for quick switching, making it suitable for applications like switching power supplies and inverters.
5. Package Type: Available in a TO-220 package, facilitating effective thermal management and easy mounting on heat sinks.
6. Gate Threshold Voltage: Low gate threshold voltage allows for easy drive from standard logic levels.
7. Thermal Resistance: Good thermal performance, aiding in higher efficiency and reliability in various environments.
Overall, the SPP12N50C3 is ideal for power management applications in industrial, automotive, and consumer electronics.

Package

The SPP12N50C3 is typically packaged in a TO-220 housing. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The SPP12N50C3 is a N-channel MOSFET with a pin count of three. The pin functions are as follows:
1. Gate (G): Controls the MOSFET operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): Connected to ground or the lower potential in the circuit. Current flows out of this terminal when the MOSFET is conducting.
This MOSFET is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 500V and a maximum continuous drain current (I_D) of 12A, making it suitable for power management and switching applications.

Manufacturer

The SPP12N50C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of products, including microcontrollers, sensors, and power management devices, serving various markets such as automotive, industrial, consumer electronics, and communication. Founded in 1987, the company has a strong focus on innovation and sustainability, providing solutions that enhance energy efficiency and performance in electronic devices.

Application

The SPP12N50C3 is a high-voltage N-channel MOSFET primarily used in power electronics applications. It is suitable for switching and amplification in various areas, including power supplies, motor drives, and industrial control systems. Its high breakdown voltage (500V) and low on-resistance make it ideal for applications such as telecom equipment, LED drivers, and photovoltaic systems. Additionally, it can be used in electronic circuitry for efficient power management and thermal performance optimization.

Equivalent

The SPP12N50C3 is a 500V, 12A N-channel MOSFET. Equivalent products include:
1. STP12NM50 - STMicroelectronics
2. MTP12N50E - ON Semiconductor
3. IRF840 - International Rectifier
4. FQP12N50 - Fairchild Semiconductor
Ensure to check specifications for exact matches in breakdown voltage, current rating, and Rds(on).

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