圖片僅供參考
SPD07N60C3
MOSFET N-CH 600V 7.3A TO252-3
- 製造商
- 製造商。 部分 #SPD07N60C3
- 包 TO-252-3
- 資料表
- 有現貨的4832
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Bulk |
| Series | CoolMOS™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 7.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 600mOhm @ 4.6A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 350µA |
| GateCharge(Qg)(Max)@Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 790 pF @ 25 V |
| PowerDissipation(Max) | 83W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3 |
概述
Description
SPD07N60C3 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 7A. This component is commonly used in switch-mode power supplies, motor drivers, and other high-voltage switching applications.
The device exhibits low on-resistance and high-speed switching capabilities, making it suitable for efficient power management. Its TO-220 package facilitates effective heat dissipation, allowing for improved thermal performance. The SPD07N60C3 also includes built-in protection features, such as avalanche rating, which enhances its reliability in demanding applications.
Overall, this MOSFET is ideal for engineers seeking robust solutions in high-voltage environments, combining performance with reliability. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
The device exhibits low on-resistance and high-speed switching capabilities, making it suitable for efficient power management. Its TO-220 package facilitates effective heat dissipation, allowing for improved thermal performance. The SPD07N60C3 also includes built-in protection features, such as avalanche rating, which enhances its reliability in demanding applications.
Overall, this MOSFET is ideal for engineers seeking robust solutions in high-voltage environments, combining performance with reliability. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Features
The SPD07N60C3 is a high-voltage N-channel MOSFET with the following key features:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (Id) of 7A, which is ideal for medium-power applications.
3. On-State Resistance: The Rds(on) is low, typically around 0.8 ohms, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy drive with standard voltage levels.
5. Fast Switching: It features rapid switching capabilities, which enhances efficiency in switching power supplies and converters.
6. Package Type: Typically available in TO-220 or similar packages, facilitating good thermal management.
7. Applications: Suitable for use in power supplies, motor drives, and other applications requiring high efficiency and reliability.
These features make the SPD07N60C3 a versatile choice for engineers in power electronics.
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (Id) of 7A, which is ideal for medium-power applications.
3. On-State Resistance: The Rds(on) is low, typically around 0.8 ohms, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy drive with standard voltage levels.
5. Fast Switching: It features rapid switching capabilities, which enhances efficiency in switching power supplies and converters.
6. Package Type: Typically available in TO-220 or similar packages, facilitating good thermal management.
7. Applications: Suitable for use in power supplies, motor drives, and other applications requiring high efficiency and reliability.
These features make the SPD07N60C3 a versatile choice for engineers in power electronics.
Package
The SPD07N60C3 is packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for power transistors, making it suitable for various high-voltage applications.
Pinout
The SPD07N60C3 is a N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on, enabling current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It is responsible for carrying the load current.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the lower potential in a circuit.
The SPD07N60C3 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A. It is often used in power management, switching applications, and motor control circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on, enabling current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It is responsible for carrying the load current.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the lower potential in a circuit.
The SPD07N60C3 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A. It is often used in power management, switching applications, and motor control circuits.
Manufacturer
The SPD07N60C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor devices, including power transistors, microcontrollers, and analog devices, serving various industries such as automotive, industrial, and consumer electronics. The company is known for its innovation in areas like IoT, automotive applications, and energy-efficient solutions. With a strong focus on sustainability, STMicroelectronics aims to develop technologies that enhance energy efficiency and reduce environmental impact.
Application
The SPD07N60C3 is a N-channel MOSFET used in various applications, including power supplies, motor controls, DC-DC converters, and switching applications. Its ability to handle high voltages and currents makes it suitable for industrial automation, automotive systems, and renewable energy systems like solar inverters. Additionally, it is used in electronic devices requiring efficient power management and thermal performance.
Equivalent
The SPD07N60C3 is a 600V, 7A N-channel MOSFET. Equivalent products include the STP7NK60Z, IRF840, and MTD7N60E. Always verify specifications such as voltage, current, RDS(on), and package type for compatibility in your specific application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25V1635FZNQ03
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX29F040CQI-70G
Macronix