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SMMBTA56LT1G
TRANS PNP 80V 0.5A SOT23-3
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規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 80 V |
| VceSaturation(Max)@IbIc | 250mV @ 10mA, 100mA |
| Current-CollectorCutoff(Max) | 100nA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 100mA, 1V |
| Power-Max | 225 mW |
| Frequency-Transition | 50MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概述
Description
The SMMBTA56LT1G is a specific model of a diode, particularly a Schottky barrier rectifier. It is designed for applications requiring efficient switching and low forward voltage drop. Key features include a maximum reverse voltage rating of 60 volts and a forward current rating of up to 1 ampere. The Schottky design allows for faster recovery times compared to standard diodes, making it suitable for high-frequency applications, including power supplies, RF applications, and clamping circuits.
The SMMBTA56LT1G is packaged in a surface-mount format, facilitating easy integration into compact electronic designs. Its low thermal resistance helps in managing heat dissipation, enhancing reliability in demanding conditions. Overall, the SMMBTA56LT1G is ideal for engineers looking for a high-performance diode with a balance of efficiency, size, and thermal management in electronic circuitry.
The SMMBTA56LT1G is packaged in a surface-mount format, facilitating easy integration into compact electronic designs. Its low thermal resistance helps in managing heat dissipation, enhancing reliability in demanding conditions. Overall, the SMMBTA56LT1G is ideal for engineers looking for a high-performance diode with a balance of efficiency, size, and thermal management in electronic circuitry.
Features
The SMMBTA56LT1G is a high-performance, low VCE(sat) NPN transistor designed for medium-speed switching applications. Key features include:
1. Voltage Rating: Collector-Emitter voltage (VCE) is rated at 56V, making it suitable for various applications.
2. Current Rating: It can handle a continuous collector current (IC) of up to 2A.
3. Power Dissipation: The transistor supports a power dissipation of 1W, allowing it to handle robust loads.
4. Gain: It offers a high DC current gain (hFE), typically ranging from 100 to 300, enhancing efficiency in amplification.
5. Package: It comes in a TO-252 (DPAK) package, which is surface mountable and helps in efficient thermal management.
6. Applications: Commonly used in general-purpose switching and amplification tasks in consumer electronics, automotive, and industrial applications.
Overall, the SMMBTA56LT1G delivers reliable performance with a balance of voltage, current, and power handling capabilities.
1. Voltage Rating: Collector-Emitter voltage (VCE) is rated at 56V, making it suitable for various applications.
2. Current Rating: It can handle a continuous collector current (IC) of up to 2A.
3. Power Dissipation: The transistor supports a power dissipation of 1W, allowing it to handle robust loads.
4. Gain: It offers a high DC current gain (hFE), typically ranging from 100 to 300, enhancing efficiency in amplification.
5. Package: It comes in a TO-252 (DPAK) package, which is surface mountable and helps in efficient thermal management.
6. Applications: Commonly used in general-purpose switching and amplification tasks in consumer electronics, automotive, and industrial applications.
Overall, the SMMBTA56LT1G delivers reliable performance with a balance of voltage, current, and power handling capabilities.
Package
The SMMBTA56LT1G is packaged in a SOT-23 (Small Outline Transistor) format. This compact package is suitable for surface mount applications, providing efficient performance in a small footprint.
Pinout
The SMMBTA56LT1G is a surface-mount NPN bipolar junction transistor (BJT) with a pin count of three. Its primary functions include switching and amplification applications in low-power electronics.
Pin Configuration:
1. Emitter (E) - The terminal through which current exits the transistor.
2. Base (B) - The terminal that controls the transistor's operation; applying a current here allows current to flow from the collector to the emitter.
3. Collector (C) - The terminal through which current enters the transistor.
The SMMBTA56LT1G is designed for high-speed switching and can handle a maximum collector current of 600 mA and a maximum collector-emitter voltage of 60 V. Its compact size and low thermal resistance make it suitable for space-constrained applications in consumer electronics, automotive, and industrial devices.
Pin Configuration:
1. Emitter (E) - The terminal through which current exits the transistor.
2. Base (B) - The terminal that controls the transistor's operation; applying a current here allows current to flow from the collector to the emitter.
3. Collector (C) - The terminal through which current enters the transistor.
The SMMBTA56LT1G is designed for high-speed switching and can handle a maximum collector current of 600 mA and a maximum collector-emitter voltage of 60 V. Its compact size and low thermal resistance make it suitable for space-constrained applications in consumer electronics, automotive, and industrial devices.
Manufacturer
The SMMBTA56LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in the design and production of a wide range of semiconductor components, including discrete devices, analog ICs, and power management solutions. The company serves various markets such as automotive, industrial, communications, consumer electronics, and computing, focusing on energy-efficient technologies and providing innovative solutions for its customers. ON Semiconductor is known for its commitment to quality and reliability in its products.
Application
The SMMBTA56LT1G is a bidirectional transient voltage suppressor (TVS) diode used for ESD protection and overvoltage protection in various applications. It is commonly found in consumer electronics, automotive systems, telecommunications, and industrial equipment to safeguard sensitive components from voltage spikes and surges, ensuring reliable operation and longevity.
Equivalent
The SMMBTA56LT1G is a NPN transistor typically used in low-power switching and amplification applications. Equivalent products include the 2N4401, BC547, and MPS2222. Ensure to verify specifications like current ratings and package types for compatibility in your specific application.
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