SIS412DN-T1-GE3

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SIS412DN-T1-GE3

MOSFET N-CH 30V 12A PPAK1212-8

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  • 包 PowerPAK-1212-8
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規格

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 24mOhm @ 7.8A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 435 pF @ 15 V
PowerDissipation(Max) 3.2W (Ta), 15.6W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

概述

Description

The SIS412DN-T1-GE3 is a high-performance integrated circuit designed for power management applications, specifically for synchronous buck converters. It features two channels that can operate independently or in a synchronized manner, making it suitable for various voltage regulation needs in multiple devices. Key features include adjustable output voltage, high efficiency, and robust protection mechanisms such as overcurrent protection and thermal shutdown.
The device is designed to support a wide input voltage range and can deliver a significant output current, making it ideal for applications in telecommunications, computing, and consumer electronics. Its compact package and low external component count facilitate easy integration into existing designs.
Overall, the SIS412DN-T1-GE3 provides a versatile and reliable solution for power management, ensuring efficient energy conversion and stability in various electronic systems.

Features

The SIS412DN-T1-GE3 is an advanced power management integrated circuit (PMIC) designed for synchronous buck converters. Key features include:
1. Dual Output: The device can provide two independent output voltages, making it suitable for applications requiring multiple power rails.
2. High Efficiency: It operates with high efficiency across a wide load range, which helps in reducing heat generation and prolonging battery life in portable devices.
3. Wide Input Voltage Range: Typically supports input voltages from 4.5V to 17V, allowing flexibility in power supply options.
4. Current Limit Protection: Integrated current limiting ensures safe operation under fault conditions.
5. Thermal Shutdown: Protects the device from overheating, enhancing reliability.
6. External Compensation: Allows for flexibility in stability optimization based on the output load and application requirements.
7. Small Package Size: Available in a compact package, suitable for space-constrained designs.
These features make the SIS412DN-T1-GE3 ideal for various applications, including consumer electronics, telecommunications, and industrial systems.

Package

The SIS412DN-T1-GE3 comes in a SOP-8 (Small Outline Package), which is a surface-mount package with eight pins.

Pinout

The SIS412DN-T1-GE3 is a high-performance, low-power integrated circuit used primarily for power management in various applications. It features a pin count of 8.
The functions of its pins are as follows:
1. GND: Ground connection.
2. VIN: Input voltage supply.
3. VOUT: Output voltage.
4. EN: Enable pin for turning the device on or off.
5. VREF: Reference voltage output.
6. FB: Feedback pin for voltage regulation.
7. COMP: Compensation pin for stability.
8. SW: Switch node for power conversion.
This device is commonly used in applications such as DC-DC converters and power management systems for its efficiency and functionality.

Manufacturer

The SIS412DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Established in 1962, the company operates in various sectors, including automotive, industrial, medical, and telecommunications, providing a wide range of products such as resistors, capacitors, diodes, and integrated circuits. Vishay is known for its innovation and quality in the electronic components market, serving both large-scale OEMs and smaller manufacturers.

Application

The SIS412DN-T1-GE3 is a dual high-side MOSFET driver primarily used in power management applications. Key application areas include automotive systems, industrial automation, motor control, and power supply circuits. It is designed for driving loads in DC-DC converters, battery management systems, and other areas requiring efficient power switching and control.

Equivalent

Equivalent products to the SIS412DN-T1-GE3 chip include the SIS412DN-T1-GE3 itself, as well as similar devices from other manufacturers like the IRF3205, STP75NF75, or AOD403. Ensure to compare specifications such as voltage, current ratings, and package types to confirm compatibility for your specific application.

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