SIDR5802EP-T1-RE3

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SIDR5802EP-T1-RE3

N-CHANNEL 80 V (D-S) 175C MOSFET

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規格

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 34.2A (Ta), 153A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 7.5V, 10V
RdsOn(Max)@IdVgs 2.9mOhm @ 20A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 60 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3020 pF @ 40 V
PowerDissipation(Max) 7.5W (Ta), 150W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8DC

概述

Description

SIDR5802EP-T1-RE3 is a SIDR-series Schottky barrier rectifier diode intended for surface-mount use in power electronics. It provides low forward voltage drop and fast switching for efficient rectification in applications like DC-DC converters, freewheeling diodes, and polarity protection. The -EP-T1-RE3 suffix denotes the specific package/lead-free RoHS variant and packaging style; exact details vary by variant.
Key point:
- For precise electrical ratings (VRRM, IF(AV), VF, IR, TJ), thermal data, and exact package, consult the official datasheet from the manufacturer or a trusted distributor (Digi-Key, Mouser, etc.). This will confirm whether it’s suited for your voltage/current requirements and thermal conditions.

Application

Typical applications:
- Fast-recovery/ultrafast rectification in switching power supplies (SMPS)
- DC-DC converters and point-of-load regulators
- Freewheeling diodes in buck/boost/inverter topologies
- Power adapters and battery chargers
- Telecom and data-center power modules
- Solar inverters and motor-drive circuits

Equivalent

I don’t have that part in my offline database. Please provide the chip’s datasheet or key specs (function, input/output voltages, max current, package, switching frequency). With that I can list direct equivalents (same pinout, specs) and close substitutes.

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