圖片僅供參考
SI7949DP-T1-E3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
- 製造商
- 製造商。 部分 #SI7949DP-T1-E3
- 包 PowerPAK-SO-8
- 資料表 SI7949DP-T1-E3 DataSheet
- 有現貨的7439
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3.2A |
| RdsOn(Max)@IdVgs | 64mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40nC @ 10V |
| Power-Max | 1.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
概述
Description
The SI7949DP-T1-E3 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance of approximately 6.5 mΩ, which enhances efficiency in various applications such as DC-DC converters and power supply circuits. The device is housed in a compact SO-8 package, making it suitable for space-constrained designs.
With a maximum continuous drain current rating of 49A and a gate-source voltage range of ±20V, the SI7949DP-T1-E3 supports high-efficiency switching performance. Additionally, it has a fast switching speed, which minimizes energy losses during operation. The MOSFET is optimized for both high-frequency and high-current applications, making it versatile for use in automotive, industrial, and consumer electronics.
Overall, the SI7949DP-T1-E3 is a reliable choice for engineers seeking robust power management solutions in their designs.
With a maximum continuous drain current rating of 49A and a gate-source voltage range of ±20V, the SI7949DP-T1-E3 supports high-efficiency switching performance. Additionally, it has a fast switching speed, which minimizes energy losses during operation. The MOSFET is optimized for both high-frequency and high-current applications, making it versatile for use in automotive, industrial, and consumer electronics.
Overall, the SI7949DP-T1-E3 is a reliable choice for engineers seeking robust power management solutions in their designs.
Features
The SI7949DP-T1-E3 is a N-channel MOSFET from the Vishay Siliconix line, designed for high-efficiency power management applications. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents of up to 49A, allowing it to support high power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 5.6 mΩ, which ensures minimal power loss during operation.
4. Fast Switching: The MOSFET is designed for rapid switching, enhancing performance in applications like DC-DC converters and power management circuits.
5. Thermal Performance: It comes in a TO-220 package, enabling effective heat dissipation and facilitating high thermal performance.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with standard logic level drive voltages.
These features make the SI7949DP-T1-E3 an excellent choice for applications requiring efficient power switching and management.
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents of up to 49A, allowing it to support high power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 5.6 mΩ, which ensures minimal power loss during operation.
4. Fast Switching: The MOSFET is designed for rapid switching, enhancing performance in applications like DC-DC converters and power management circuits.
5. Thermal Performance: It comes in a TO-220 package, enabling effective heat dissipation and facilitating high thermal performance.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with standard logic level drive voltages.
These features make the SI7949DP-T1-E3 an excellent choice for applications requiring efficient power switching and management.
Package
The SI7949DP-T1-E3 is packaged in a dual flat no-lead (DFN) format, specifically a 5mm x 6mm package. This surface-mount package type is designed for efficient thermal performance and space-saving on PCBs.
Pinout
The SI7949DP-T1-E3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. G (Gate): Controls the MOSFET’s on/off state.
2. D (Drain): Connects to the load; where the current flows out.
3. S (Source): Connects to ground or the negative side of the power supply; where current flows in.
The pin layout typically follows this configuration:
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Drain
- Pins 6-8: Other connections for thermal or electrical performance enhancement as per specific applications.
The SI7949DP-T1-E3 is designed for low on-resistance, high-speed switching applications, making it suitable for power management in various electronic devices. Its robust construction allows it to handle high voltages and currents effectively.
1. G (Gate): Controls the MOSFET’s on/off state.
2. D (Drain): Connects to the load; where the current flows out.
3. S (Source): Connects to ground or the negative side of the power supply; where current flows in.
The pin layout typically follows this configuration:
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Drain
- Pins 6-8: Other connections for thermal or electrical performance enhancement as per specific applications.
The SI7949DP-T1-E3 is designed for low on-resistance, high-speed switching applications, making it suitable for power management in various electronic devices. Its robust construction allows it to handle high voltages and currents effectively.
Manufacturer
The SI7949DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, it is one of the largest manufacturers in the electronic components industry. Vishay's product portfolio includes products such as resistors, capacitors, inductors, diodes, and MOSFETs, serving various sectors including automotive, industrial, telecommunications, and consumer electronics. The company is known for its innovation and quality, providing solutions that support the design and manufacturing of a wide range of electronic applications.
Application
The SI7949DP-T1-E3 is a high-performance N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, power supplies, motor drives, and battery management systems. It is suitable for use in automotive, industrial, and consumer electronics due to its low on-resistance, fast switching speed, and high thermal performance.
Equivalent
The SI7949DP-T1-E3 is a N-channel MOSFET. Equivalent products include the IRF3205, FQP50N06L, and STP55NF06L. Check datasheets for exact specifications to ensure compatibility with your application, as parameters like voltage rating, current capacity, and on-resistance may vary.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25R8035FM1IL0
Macronix
-
MX25L3233FZBI-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V16066M1I02
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix