SI7949DP-T1-E3

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SI7949DP-T1-E3

MOSFET 2P-CH 60V 3.2A PPAK SO-8

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規格

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 3.2A
RdsOn(Max)@IdVgs 64mOhm @ 5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 40nC @ 10V
Power-Max 1.5W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case PowerPAK® SO-8 Dual

概述

Description

The SI7949DP-T1-E3 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance of approximately 6.5 mΩ, which enhances efficiency in various applications such as DC-DC converters and power supply circuits. The device is housed in a compact SO-8 package, making it suitable for space-constrained designs.
With a maximum continuous drain current rating of 49A and a gate-source voltage range of ±20V, the SI7949DP-T1-E3 supports high-efficiency switching performance. Additionally, it has a fast switching speed, which minimizes energy losses during operation. The MOSFET is optimized for both high-frequency and high-current applications, making it versatile for use in automotive, industrial, and consumer electronics.
Overall, the SI7949DP-T1-E3 is a reliable choice for engineers seeking robust power management solutions in their designs.

Features

The SI7949DP-T1-E3 is a N-channel MOSFET from the Vishay Siliconix line, designed for high-efficiency power management applications. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents of up to 49A, allowing it to support high power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 5.6 mΩ, which ensures minimal power loss during operation.
4. Fast Switching: The MOSFET is designed for rapid switching, enhancing performance in applications like DC-DC converters and power management circuits.
5. Thermal Performance: It comes in a TO-220 package, enabling effective heat dissipation and facilitating high thermal performance.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with standard logic level drive voltages.
These features make the SI7949DP-T1-E3 an excellent choice for applications requiring efficient power switching and management.

Package

The SI7949DP-T1-E3 is packaged in a dual flat no-lead (DFN) format, specifically a 5mm x 6mm package. This surface-mount package type is designed for efficient thermal performance and space-saving on PCBs.

Pinout

The SI7949DP-T1-E3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. G (Gate): Controls the MOSFET’s on/off state.
2. D (Drain): Connects to the load; where the current flows out.
3. S (Source): Connects to ground or the negative side of the power supply; where current flows in.
The pin layout typically follows this configuration:
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Drain
- Pins 6-8: Other connections for thermal or electrical performance enhancement as per specific applications.
The SI7949DP-T1-E3 is designed for low on-resistance, high-speed switching applications, making it suitable for power management in various electronic devices. Its robust construction allows it to handle high voltages and currents effectively.

Manufacturer

The SI7949DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, it is one of the largest manufacturers in the electronic components industry. Vishay's product portfolio includes products such as resistors, capacitors, inductors, diodes, and MOSFETs, serving various sectors including automotive, industrial, telecommunications, and consumer electronics. The company is known for its innovation and quality, providing solutions that support the design and manufacturing of a wide range of electronic applications.

Application

The SI7949DP-T1-E3 is a high-performance N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, power supplies, motor drives, and battery management systems. It is suitable for use in automotive, industrial, and consumer electronics due to its low on-resistance, fast switching speed, and high thermal performance.

Equivalent

The SI7949DP-T1-E3 is a N-channel MOSFET. Equivalent products include the IRF3205, FQP50N06L, and STP55NF06L. Check datasheets for exact specifications to ensure compatibility with your application, as parameters like voltage rating, current capacity, and on-resistance may vary.

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