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SI7938DP-T1-GE3
MOSFET 2N-CH 40V 60A PPAK SO8
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規格
| Series | TrenchFET® |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 18.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 20V |
| Power - Max | 46W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Base Product Number | SI7938 |
概述
Description
The SI7938DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance (R_DS(on)) and fast switching capabilities, making it suitable for power management in various electronic devices, including power supplies and DC-DC converters. The device supports high current handling and has a maximum drain-source voltage (V_DS) rating, allowing it to operate effectively in demanding environments.
This MOSFET is packaged in a compact surface-mount format, which aids in space-efficient design in modern electronics. Its compatibility with standard driving circuits ensures ease of integration into existing systems. Additionally, the SI7938DP-T1-GE3 is manufactured in accordance with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice for manufacturers. Overall, it is an optimal solution for applications requiring efficient switching performance, reliability, and compact design.
This MOSFET is packaged in a compact surface-mount format, which aids in space-efficient design in modern electronics. Its compatibility with standard driving circuits ensures ease of integration into existing systems. Additionally, the SI7938DP-T1-GE3 is manufactured in accordance with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice for manufacturers. Overall, it is an optimal solution for applications requiring efficient switching performance, reliability, and compact design.
Features
The SI7938DP-T1-GE3 is a N-channel MOSFET designed for efficient power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: Capable of handling continuous drain current up to 62A, which is ideal for high-current applications.
3. On-Resistance (RDS(ON)): Low on-resistance of approximately 7.4 mΩ at VGS = 10V, ensuring minimal power loss during operation.
4. Gate Voltage: Compatible with logic-level gate drive voltages, facilitating easy interfacing with microcontrollers.
5. Package Type: Available in a TO-220 package, providing good thermal performance and ease of heatsinking.
6. Fast Switching Speed: Designed for high-speed switching, which is important for applications like DC-DC converters and motor drives.
7. Thermal Resistance: Low thermal resistance for effective heat dissipation, enhancing reliability and performance.
These features make the SI7938DP-T1-GE3 suitable for applications in power supplies, automotive systems, and industrial control.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: Capable of handling continuous drain current up to 62A, which is ideal for high-current applications.
3. On-Resistance (RDS(ON)): Low on-resistance of approximately 7.4 mΩ at VGS = 10V, ensuring minimal power loss during operation.
4. Gate Voltage: Compatible with logic-level gate drive voltages, facilitating easy interfacing with microcontrollers.
5. Package Type: Available in a TO-220 package, providing good thermal performance and ease of heatsinking.
6. Fast Switching Speed: Designed for high-speed switching, which is important for applications like DC-DC converters and motor drives.
7. Thermal Resistance: Low thermal resistance for effective heat dissipation, enhancing reliability and performance.
These features make the SI7938DP-T1-GE3 suitable for applications in power supplies, automotive systems, and industrial control.
Package
The SI7938DP-T1-GE3 is packaged in a SO-8 (Small Outline) format. This package type is commonly used for surface-mount devices and provides a compact solution for various electronic applications.
Pinout
The SI7938DP-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary function is to act as a power switch in various applications, including power management and DC-DC converters. The device is designed to handle high current and voltage, making it suitable for efficient power control.
The specific pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connected to the load.
3. Source (S): Connected to ground or the negative side of the power supply.
The device features low on-resistance and fast switching capabilities, which enhance its efficiency in power applications. For detailed pin assignments and characteristics, refer to the manufacturer's datasheet.
The specific pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connected to the load.
3. Source (S): Connected to ground or the negative side of the power supply.
The device features low on-resistance and fast switching capabilities, which enhance its efficiency in power applications. For detailed pin assignments and characteristics, refer to the manufacturer's datasheet.
Manufacturer
The SI7938DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company produces a wide range of products, including MOSFETs, diodes, resistors, capacitors, and inductors, serving various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its innovation in electronic components and commitment to quality, making it a key player in the electronics industry.
Application
The SI7938DP-T1-GE3 is an N-channel MOSFET primarily used in applications like power management, DC-DC converters, and power supplies. Its low RDS(on) and high-speed switching capabilities make it suitable for automotive, industrial, and telecommunications applications, enabling efficient power conversion and management in various electronic devices.
Equivalent
The SI7938DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, FDS6574, and BSS138, which offer similar voltage and current ratings. Additionally, the AOD2958 and STP16NF06 are potential alternatives, depending on your specific application requirements. Always verify specifications such as V_DS, I_D, and package type before substituting.
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