SI7633DP-T1-GE3

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SI7633DP-T1-GE3

MOSFET P-CH 20V 60A PPAK SO-8

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規格

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.3mOhm @ 20A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 260 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9500 pF @ 10 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概述

Description

SI7633DP-T1-GE3 is a dual N-channel enhancement-mode MOSFET device in a compact T1 package, designed for high-efficiency power switching in consumer and automotive power-management circuits. It contains two power MOSFETs in one package, suitable for synchronous buck/boost converters, load switching, and motor drive applications.
Key points:
- Dual MOSFET in a single package for space- and cost-saving designs
- Low on-resistance and fast switching for efficient power conversion
- Integrated body diodes and good thermal performance
What to check in the datasheet:
- Vds (voltage rating) and Id (continuous current)
- Rdson (typical/max) and gate charge (Qg, Qgd)
- Switching characteristics (td(on), tr, tf, td(off))
- Packaging details and thermal resistance
- Pinout and recommended PCB layout
Typical applications:
- DC-DC converters (synchronous rectification)
- Power switches and load-driving stages
- Motor control and battery-management circuits
If you’d like, I can pull a datasheet and summarize the exact electrical specs and pinout.

Features

I don’t have the official SI7633DP-T1-GE3 datasheet in this chat. To deliver accurate features, please share the datasheet or allow me to search the web. I can then provide a concise bullet list including: voltage rating, current rating, Rds(on), package, protections (OC, OV, UVLO, thermal), operating temperature range, quiescent current, and key mechanical specs.

Package

It's a dual power MOSFET in an 8-pin surface-mount package (SO-8 / D-Pak style).

Pinout

Pin count: 6.
Function: dual N‑channel enhancement‑mode MOSFET in a SOT‑23‑6 style package. Typical pinout (top view, pads down) — verify against the datasheet for your revision:
- Pin 1: G1 (Gate of MOSFET 1)
- Pin 2: D1 (Drain of MOSFET 1)
- Pin 3: S1 (Source of MOSFET 1)
- Pin 4: S2 (Source of MOSFET 2)
- Pin 5: D2 (Drain of MOSFET 2)
- Pin 6: G2 (Gate of MOSFET 2)
Note: Some products include an exposed/thermal pad or common drain connections; always confirm exact pin assignments and thermal/packaging details in the official Vishay/Siliconix datasheet for SI7633DP‑T1‑GE3.

Manufacturer

Manufacturer: Vishay Intertechnology (brand: Vishay Siliconix).
What kind of company: Vishay is a multinational electronics components manufacturer headquartered in Malvern, Pennsylvania, that designs and produces discrete semiconductors (power MOSFETs, diodes, transistors), ICs and passive components (resistors, capacitors, inductors).

Application

Potential application areas for SI7633DP-T1-GE3:
- Power-management and DC-DC converter stages
- Load switching and battery-protection circuits
- Portable devices (phones, wearables)
- Automotive and industrial electronics
Note: consult the official datasheet for exact capabilities and recommended usage.

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