圖片僅供參考
SI7540DP-T1-E3
MOSFET N/P-CH 12V 7.6A PPAK SO-8
- 製造商
- 製造商。 部分 #SI7540DP-T1-E3
- 包 PowerPAK® SO-8 Dual
- 資料表 SI7540DP-T1-E3 DataSheet
- 有現貨的3661
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 12V |
| Current-ContinuousDrain(Id)@25°C | 7.6A, 5.7A |
| RdsOn(Max)@IdVgs | 17mOhm @ 11.8A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17nC @ 4.5V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
概述
Description
The SI7540DP-T1-E3 is a high-performance, N-channel MOSFET from Vishay Siliconix. It features a low on-resistance (RDS(on)) of approximately 4.0 mΩ at 10V gate drive, making it suitable for applications requiring high efficiency and low power loss. With a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 60A, this MOSFET is ideal for power management and switching applications in consumer electronics, automotive, and industrial systems.
The device is housed in a compact SO-8 package, providing space savings and ease of integration into various circuit designs. It offers fast switching capabilities and robustness against thermal runaway, making it a reliable choice for designers aiming to optimize performance in power converters, motor drives, and other high-current applications. Overall, the SI7540DP-T1-E3 is recognized for its superior efficiency, thermal performance, and versatility in a wide range of electronic designs.
The device is housed in a compact SO-8 package, providing space savings and ease of integration into various circuit designs. It offers fast switching capabilities and robustness against thermal runaway, making it a reliable choice for designers aiming to optimize performance in power converters, motor drives, and other high-current applications. Overall, the SI7540DP-T1-E3 is recognized for its superior efficiency, thermal performance, and versatility in a wide range of electronic designs.
Features
The SI7540DP-T1-E3 is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 75A, ensuring efficient operation in high-current scenarios.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 0.0055 ohms, which reduces power loss and enhances thermal performance.
4. Fast Switching Speed: Optimized for quick switching applications, contributing to improved efficiency in power conversion.
5. Thermal Performance: Equipped with a TO-220 package, it provides effective heat dissipation, allowing for reliable operation under demanding conditions.
6. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) range, facilitating easy drive compatibility with logic-level controllers.
7. Robustness: Designed for a wide range of applications, including DC-DC converters, motor drives, and general-purpose switching.
These features make the SI7540DP-T1-E3 an ideal choice for high-performance power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 75A, ensuring efficient operation in high-current scenarios.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 0.0055 ohms, which reduces power loss and enhances thermal performance.
4. Fast Switching Speed: Optimized for quick switching applications, contributing to improved efficiency in power conversion.
5. Thermal Performance: Equipped with a TO-220 package, it provides effective heat dissipation, allowing for reliable operation under demanding conditions.
6. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) range, facilitating easy drive compatibility with logic-level controllers.
7. Robustness: Designed for a wide range of applications, including DC-DC converters, motor drives, and general-purpose switching.
These features make the SI7540DP-T1-E3 an ideal choice for high-performance power electronics.
Package
The SI7540DP-T1-E3 is packaged in a SO-8 (Small Outline 8) package type. This surface-mount package features eight leads and is designed for efficient thermal and electrical performance in compact applications.
Pinout
The SI7540DP-T1-E3 is a N-channel MOSFET with a total of 6 pins. Its primary functions include acting as a switch for various applications, such as in power management, LED drivers, and motor control.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal connected to the ground or the source voltage.
The other three pins are typically for thermal and electrical performance enhancements, such as heat sinking or mounting. The device is designed for low on-resistance and high-speed switching, making it suitable for efficient power applications. Always refer to the specific datasheet for detailed electrical characteristics and pin assignments.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal connected to the ground or the source voltage.
The other three pins are typically for thermal and electrical performance enhancements, such as heat sinking or mounting. The device is designed for low on-resistance and high-speed switching, making it suitable for efficient power applications. Always refer to the specific datasheet for detailed electrical characteristics and pin assignments.
Manufacturer
The SI7540DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the semiconductor and passive electronic components industry. The company designs and manufactures a wide range of products, including diodes, transistors, MOSFETs, capacitors, resistors, and inductors. Vishay serves various markets, such as automotive, industrial, telecommunications, consumer electronics, and military/aerospace. With a focus on innovation and high-quality components, Vishay plays a critical role in the supply chain for electronic devices and systems worldwide.
Application
The SI7540DP-T1-E3 is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, telecom, and automotive applications. Additionally, it is effective in battery management systems and portable devices where energy efficiency is critical.
Equivalent
The SI7540DP-T1-E3 is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BSS140. Ensure to check specifications like V_DS, I_D, R_DS(on), and package type for compatibility in your specific application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FZBI-08Q
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V2033FM1I
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25L25735FMI-10G
Macronix