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SI7460DP-T1-E3
MOSFET N-CH 60V 11A PPAK SO-8
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規格
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7460 |
概述
Description
The SI7460DP-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Intertechnology. It is designed for high-performance switching applications in power management, including DC-DC converters, motor control, and load switching. The device features a low on-resistance (RDS(on)), which minimizes power loss and heat generation during operation, leading to improved efficiency.
Key specifications include a maximum drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 60A at a specified temperature. The SI7460DP-T1-E3 is packaged in a DPAK (TO-252) form factor, which facilitates efficient thermal management. The device is also characterized by fast switching speeds, making it suitable for high-frequency applications.
Additionally, it has low gate charge (QG), ensuring reduced drive requirements from the controller, which is advantageous in compact circuit designs. Overall, the SI7460DP-T1-E3 is well-suited for a variety of applications requiring robust and efficient power control.
Key specifications include a maximum drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 60A at a specified temperature. The SI7460DP-T1-E3 is packaged in a DPAK (TO-252) form factor, which facilitates efficient thermal management. The device is also characterized by fast switching speeds, making it suitable for high-frequency applications.
Additionally, it has low gate charge (QG), ensuring reduced drive requirements from the controller, which is advantageous in compact circuit designs. Overall, the SI7460DP-T1-E3 is well-suited for a variety of applications requiring robust and efficient power control.
Features
The SI7460DP-T1-E3 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 50A.
3. R_DS(on): Low on-resistance of approximately 10 mΩ, enabling reduced power loss and improved thermal performance.
4. Gate Threshold Voltage (V_GS(th)): Approximately 1.8V to 2.6V, allowing it to operate efficiently with low gate drive voltages.
5. Package: Available in a compact SO-8 package, facilitating space-saving designs.
6. High Speed: Fast switching capabilities suitable for applications such as power management and DC-DC converters.
7. Thermal Performance: Enhanced thermal characteristics for better reliability under high load conditions.
These features make the SI7460DP-T1-E3 suitable for a wide range of applications, including power supplies and motor drivers.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 50A.
3. R_DS(on): Low on-resistance of approximately 10 mΩ, enabling reduced power loss and improved thermal performance.
4. Gate Threshold Voltage (V_GS(th)): Approximately 1.8V to 2.6V, allowing it to operate efficiently with low gate drive voltages.
5. Package: Available in a compact SO-8 package, facilitating space-saving designs.
6. High Speed: Fast switching capabilities suitable for applications such as power management and DC-DC converters.
7. Thermal Performance: Enhanced thermal characteristics for better reliability under high load conditions.
These features make the SI7460DP-T1-E3 suitable for a wide range of applications, including power supplies and motor drivers.
Package
The SI7460DP-T1-E3 is packaged in a SOP-8 (Small Outline Package, 8 pins) format. This compact package type is designed for surface mounting and is commonly used in various electronic applications for its space efficiency and thermal performance.
Pinout
The SI7460DP-T1-E3 is a N-channel MOSFET from Vishay with a pin count of 6. Its primary function is to switch and amplify electronic signals in various applications, including power management and DC-DC converters.
Pin Configuration:
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - Connects to the load and is where the current flows out.
3. Source (S) - Connects to the ground or negative side of the circuit.
4. Drain (D) - Duplicate for dual drain configuration.
5. Source (S) - Duplicate for dual source configuration.
6. Gate (G) - Duplicate for dual gate configuration.
This device features low on-resistance, high-speed switching capabilities, and is suitable for various applications requiring efficient power control. It is commonly used in consumer electronics, industrial automation, and automotive systems.
Pin Configuration:
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - Connects to the load and is where the current flows out.
3. Source (S) - Connects to the ground or negative side of the circuit.
4. Drain (D) - Duplicate for dual drain configuration.
5. Source (S) - Duplicate for dual source configuration.
6. Gate (G) - Duplicate for dual gate configuration.
This device features low on-resistance, high-speed switching capabilities, and is suitable for various applications requiring efficient power control. It is commonly used in consumer electronics, industrial automation, and automotive systems.
Manufacturer
The SI7460DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA. Vishay specializes in producing a wide range of products, including diodes, resistors, capacitors, and MOSFETs, catering to various industries such as automotive, industrial, consumer electronics, and telecommunications. The SI7460DP-T1-E3 is a N-channel MOSFET, commonly used in power management applications due to its efficiency and performance characteristics. Vishay is known for its commitment to innovation and quality in the electronics sector.
Application
The SI7460DP-T1-E3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drivers, and load switching. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, industrial equipment, and automotive systems.
Equivalent
The SI7460DP-T1-E3 is a N-channel MOSFET with specific voltage and current ratings. Equivalent products include the BSS123, IRF520, and FQP30N06L, which offer similar characteristics. However, ensure to check specifications like voltage, current, R_DS(on), and package type for compatibility in your application. Always refer to the manufacturer's datasheets for detailed comparisons.
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