圖片僅供參考

SI7174DP-T1-GE3

Name: SI7174DP-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET N-CH 75V 60A PPAK SO-8

製造商
製造商。部分 #SI7174DP-T1-GE3
包
資料表
有現貨的8168

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	75 V
Current-ContinuousDrain(Id)@25°C	60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	7mOhm @ 10A, 10V
Vgs(th)(Max)@Id	4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	72 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	2770 pF @ 40 V
PowerDissipation(Max)	6.25W (Ta), 104W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PowerPAK® SO-8

概述

Description

SI7174DP-T1-GE3 is a part number, but the exact introduction depends on the manufacturer. It most likely designates a silicon IC used in power/field applications—often a galvanically isolated interface or gate-driver device (e.g., isolator or high-side/low-side driver) for driving MOSFETs or handling signals across an isolation boundary.
Typical roles and features you’d expect (varies by vendor):
- Provides signal transfer across isolation barriers; protects the microcontroller from high voltage domains.
- May offer multiple isolated channels, specific isolation voltage (Viso), and defined input/output logic levels.
- Requires dual supplies (primary/secondary sides) and has specified propagation delay, noise/EMI performance, and thermal limits.
- Package style hinted by DP-T1-GE3 naming, used in motor drives, SMPS, and DC-DC converters.
For a precise, accurate intro, please share the vendor or a datasheet link. I can then give a concise 1–2 paragraph summary with exact function, key specs, and typical applications.

Package

I can’t verify the package type for SI7174DP-T1-GE3 without checking the manufacturer datasheet. Would you like me to look it up and report the package (and footprint)?

Pinout

SI7174DP-T1-GE3 is a 6-pin dual N‑channel enhancement‑mode MOSFET (SOT‑23‑6 style). Typical pinout (verify against the datasheet for orientation):
- Pin 1: Gate 1 (G1)
- Pin 2: Drain 1 (D1)
- Pin 3: Source 1 (S1)
- Pin 4: Source 2 (S2)
- Pin 5: Drain 2 (D2)
- Pin 6: Gate 2 (G2)
Function: two independent low‑voltage N‑channel MOSFETs in one package for low‑side switching, load switching, synchronous rectification and power management applications. Verify the manufacturer datasheet for exact pin assignment and thermal/tab connections.

Manufacturer

Manufacturer: Silicon Laboratories (Silicon Labs).
What kind of company: A semiconductor company that designs and manufactures integrated circuits (ICs) and related solutions for embedded systems, timing, sensors, wireless, and power management.

Application

- Automotive: body electronics, infotainment, power rails
- Industrial: motor drives, power supplies, automation controllers
- Consumer electronics: laptops, tablets, cameras, wearables
- Power supplies/chargers: AC-DC adapters, DC-DC converters
- Battery management and charging systems
- Lighting: LED drivers
- Telecommunications: base stations, network power
- Renewable energy: solar inverters, energy-storage interfaces