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SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
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規格
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 35 V |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7148 |
概述
Description
The SI7148DP-T1-E3 is a high-performance, dual N-channel MOSFET designed for applications requiring efficient power management and switching capabilities. It features a low on-resistance (R_DS(on)), which minimizes power loss and improves thermal performance, making it suitable for use in DC-DC converters, motor drivers, and power management circuits.
This device is part of the Silicon Labs family of products and is intended for applications that operate within a wide voltage range and require fast switching speeds. The SI7148DP-T1-E3 is housed in a compact SOIC-8 package, facilitating easy integration into various electronic designs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 30A, depending on thermal conditions. Its features and reliability make it a popular choice in consumer electronics, automotive, and industrial applications. For optimal performance, it is essential to follow the recommended operating conditions and thermal management practices.
This device is part of the Silicon Labs family of products and is intended for applications that operate within a wide voltage range and require fast switching speeds. The SI7148DP-T1-E3 is housed in a compact SOIC-8 package, facilitating easy integration into various electronic designs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 30A, depending on thermal conditions. Its features and reliability make it a popular choice in consumer electronics, automotive, and industrial applications. For optimal performance, it is essential to follow the recommended operating conditions and thermal management practices.
Features
The SI7148DP-T1-E3 is a dual-channel high-speed, high-side MOSFET driver designed for efficient power management in various applications. Key features include:
1. Dual-Channel Output: Drives two independent high-side MOSFETs, suitable for half-bridge configurations.
2. High Driving Capability: Provides a peak output current of up to 2A, enabling rapid switching and minimization of switching losses.
3. Wide Supply Voltage Range: Operates from 4.5V to 16V, accommodating various applications.
4. Fast Switching Speed: Low propagation delay and adjustable rise/fall times enhance efficiency in switching applications.
5. Integrated Bootstrap Circuitry: Simplifies high-side drive configuration, eliminating the need for external components.
6. Thermal Protection: Includes thermal shutdown features to prevent overheating and ensure reliability.
7. Compact Package: Offered in an 8-pin SOIC package, it allows for space-efficient designs.
These features make the SI7148DP-T1-E3 ideal for applications such as motor drives, power supplies, and other high-efficiency power management systems.
1. Dual-Channel Output: Drives two independent high-side MOSFETs, suitable for half-bridge configurations.
2. High Driving Capability: Provides a peak output current of up to 2A, enabling rapid switching and minimization of switching losses.
3. Wide Supply Voltage Range: Operates from 4.5V to 16V, accommodating various applications.
4. Fast Switching Speed: Low propagation delay and adjustable rise/fall times enhance efficiency in switching applications.
5. Integrated Bootstrap Circuitry: Simplifies high-side drive configuration, eliminating the need for external components.
6. Thermal Protection: Includes thermal shutdown features to prevent overheating and ensure reliability.
7. Compact Package: Offered in an 8-pin SOIC package, it allows for space-efficient designs.
These features make the SI7148DP-T1-E3 ideal for applications such as motor drives, power supplies, and other high-efficiency power management systems.
Package
The SI7148DP-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package, which features an 8-pin configuration suitable for surface mounting. This package type is commonly used for integrated circuits requiring efficient space utilization and thermal performance.
Pinout
The SI7148DP-T1-E3 is a power MOSFET with a total of 5 pins. Its primary functions include:
1. Gate (G) - Controls the turning on and off of the MOSFET.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S) - The terminal through which the current enters when the MOSFET is on.
The SI7148DP-T1-E3 is designed for low on-resistance and high-speed switching applications, making it suitable for various power management and switching applications. It is typically used in power converters, motor drivers, and load switching applications. The package type is a Dual-DPAK (TO-252), which provides efficient thermal performance.
1. Gate (G) - Controls the turning on and off of the MOSFET.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S) - The terminal through which the current enters when the MOSFET is on.
The SI7148DP-T1-E3 is designed for low on-resistance and high-speed switching applications, making it suitable for various power management and switching applications. It is typically used in power converters, motor drivers, and load switching applications. The package type is a Dual-DPAK (TO-252), which provides efficient thermal performance.
Manufacturer
The SI7148DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products, including resistors, capacitors, inductors, and MOSFETs, which are essential for various applications in consumer electronics, automotive, industrial, and telecommunications sectors. Vishay is known for its innovation and quality in the electronics industry, providing solutions that enhance performance and reliability in electronic circuits.
Application
The SI7148DP-T1-E3 is a high-speed MOSFET driver, commonly used in applications such as power management, DC-DC converters, motor drives, and power amplifiers. It facilitates efficient switching in renewable energy systems, industrial automation, and automotive electronics. Its fast switching capability makes it suitable for high-frequency operations in various electronic circuits.
Equivalent
The SI7148DP-T1-E3 is a dual N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and STP16NF06. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility.
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