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SI4943CDY-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
- 製造商
- 製造商。 部分 #SI4943CDY-T1-GE3
- 包 8-SOIC (0.154, 3.90mm Width)
- 資料表
- 有現貨的3485
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規格
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 8A |
| RdsOn(Max)@IdVgs | 19.2mOhm @ 8.3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1945pF @ 10V |
| Power-Max | 3.1W |
| OperatingTemperature | -50°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
SI4943CDY-T1-GE3 is a Vishay Siliconix N-channel enhancement-mode MOSFET. It is a small, high-efficiency power switch device used in low-voltage power electronics.
Key points:
- N-channel MOSFET designed for switching and amplification in DC-DC converters, load switches, motor drivers, and similar applications.
- Packaged in a compact surface-mount variant (GE3 code denotes a specific assembly/package option; see datasheet for exact pinout).
- Offers low on-resistance and fast switching characteristics to improve efficiency; suitable for logic-level gate drive in many designs.
- RoHS-compliant and suitable for rugged switching performance (check exact avalanche, thermal, and safe-operating-area specs in the datasheet).
Note:
Exact electrical specs (VDS, ID, RDS(on), gate charge), pinout, thermal limits, and packaging details vary by variant. Always consult the official datasheet for SI4943CDY-T1-GE3 to obtain the precise numbers and application guidance.
Key points:
- N-channel MOSFET designed for switching and amplification in DC-DC converters, load switches, motor drivers, and similar applications.
- Packaged in a compact surface-mount variant (GE3 code denotes a specific assembly/package option; see datasheet for exact pinout).
- Offers low on-resistance and fast switching characteristics to improve efficiency; suitable for logic-level gate drive in many designs.
- RoHS-compliant and suitable for rugged switching performance (check exact avalanche, thermal, and safe-operating-area specs in the datasheet).
Note:
Exact electrical specs (VDS, ID, RDS(on), gate charge), pinout, thermal limits, and packaging details vary by variant. Always consult the official datasheet for SI4943CDY-T1-GE3 to obtain the precise numbers and application guidance.
Package
D2PAK (TO-263) surface-mount package (3 leads plus center tab).
Pinout
- Pin count: 8 pins
- Function: Dual N-channel enhancement-mode MOSFETs in one package (two MOSFETs for power-switching/power-management applications).
- Function: Dual N-channel enhancement-mode MOSFETs in one package (two MOSFETs for power-switching/power-management applications).
Manufacturer
- Manufacturer: Vishay Intertechnology, Inc. (Vishay Siliconix)
- What kind of company: A global semiconductor and electronic component manufacturer, producing discrete transistors/MOSFETs, diodes, resistors, capacitors, sensors, and related components.
- What kind of company: A global semiconductor and electronic component manufacturer, producing discrete transistors/MOSFETs, diodes, resistors, capacitors, sensors, and related components.
Application
SI4943CDY-T1-GE3 is a 30 V N-channel MOSFET used for switching power applications. Typical uses include:
- DC-DC converter switches (buck/boost, synchronous rectification)
- High-side/low-side switches and load switches in power-management
- Battery protection and hot-swap circuits
- Motor-control/drivers in portable and automotive electronics
- General power-switching in telecom and consumer devices
- DC-DC converter switches (buck/boost, synchronous rectification)
- High-side/low-side switches and load switches in power-management
- Battery protection and hot-swap circuits
- Motor-control/drivers in portable and automotive electronics
- General power-switching in telecom and consumer devices
Equivalent
I can’t give exact equivalents without specs. SI4943CDY-T1-GE3 is a P‑channel MOSFET; cross‑references depend on Vds, Id, Rds(on), package, etc. Please share key data (e.g., Vds, Id, Rds(on) at your gate drive, package type). I’ll provide direct cross‑reference part numbers from Vishay, Infineon, ON Semiconductor, ROHM, etc.
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