SI4501BDY-T1-GE3

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SI4501BDY-T1-GE3

MOSFET N/P-CH 30V/8V 8SOIC

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規格

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N and P-Channel, Common Drain
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V, 8V
Current-ContinuousDrain(Id)@25°C 12A, 8A
RdsOn(Max)@IdVgs 17mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 25nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 805pF @ 15V
Power-Max 4.5W, 3.1W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

概述

Description

Introduction to SI4501BDY-T1-GE3:
- Type: N-channel enhancement-mode MOSFET from Vishay Siliconix (SI4501 family). Used for switching and power-management in low-voltage circuits.
- Package: Small SMD/3-pin package (T1-GE3 variant indicates RoHS-compliant, reel/tape packaging).
- Core use: Acts as a low-side or high-side switch in DC-DC converters, motor drives, load switches, and general power switching.
- Key electricals to check in the datasheet: maximum drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)) at a given gate drive (Vgs), and gate threshold (Vgs(th)). The device is designed for logic-level gate drive and low on-resistance to improve efficiency.
- Design notes: Ensure gate drive voltage is adequate for the desired Rds(on), provide proper ESD protection, and manage heat for continuous loads.
- How to use: Refer to the datasheet for exact specs (Vds, Id, Rds(on), package details) and application notes for wiring, protection, and switching performance.
For precise numbers, consult the SI4501BDY-T1-GE3 datasheet from Vishay.

Features

Here are the typical features of SI4501BDY-T1-GE3:
- N-channel enhancement-mode MOSFET
- Drain–source voltage (VDS): 30 V class device
- Very low on-resistance (RDS(on)) for high efficiency (milliohm range)
- Logic-level gate drive compatible (works well with standard 4.5–5 V logic)
- Fast switching with low gate charge and input capacitance
- Trench MOSFET technology for improved performance
- Package: SOT-23 (three-terminal) in T1-GE3 tape/reel variant
- Pb-free, RoHS compliant
- Suitable for load switches, DC-DC converters, power paths in portable/compact designs
Note: For exact electrical numbers (RDS(on) vs. VGS, switching specs, and operating temp range), please refer to the official datasheet.

Package

SOT-23 3-pin package (SOT-23-3).

Pinout

Pin count: 3 pins (SOT-23/T1 package).
Function: N-channel enhancement-mode MOSFET (Drain-Source switch) with Gate, Drain, and Source terminals. Used as a low-side or high-side switch in circuits, depending on orientation.

Manufacturer

Manufacturer: Vishay Intertechnology, Inc. (Vishay Siliconix brand).
What kind of company: A global electronics components manufacturer that designs and produces semiconductors (e.g., MOSFETs) and passive components (resistors, capacitors) for various industries.

Application

Si4501BDY-T1-GE3 is an N-channel MOSFET used as a switching element in power-management circuits. Typical applications:
- DC-DC converters (synchronous buck/boost)
- Load switches and high-/low-side switches
- Battery protection and power-path control in portable devices
- Motor/actuator driver circuits
- Compact switching circuits in mobile, wearable, IoT, and automotive electronics

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