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SI4420BDY-T1-E3

Name: SI4420BDY-T1-E3
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 9.5A 8SO

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規格

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	9.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	8.5mOhm @ 13.5A, 10V
Vgs(th)(Max)@Id	3V @ 250µA
GateCharge(Qg)(Max)@Vgs	50 nC @ 10 V
Vgs(Max)	±20V
PowerDissipation(Max)	1.4W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-SOIC

概述

Description

SI4420BDY-T1-E3 is Silicon Labs’ sub‑GHz RF transceiver IC. It is a compact, highly integrated device that combines the RF front end, a PLL/ synthesizer, power amplifier and LNA, plus digital baseband for wireless data at ISM bands roughly from 300 to 1000 MHz. It supports common modulation schemes such as FSK/GFSK and OOK/ASK, with configurable data rates, RSSI, and basic packet handling. The device is controlled via a serial SPI interface and typically operates from a 1.8–3.6 V supply, with configurable output power, channel spacing, and bandwidth for range and power efficiency. The BDY-T1-E3 suffix indicates the particular packaging/ordering variant and RoHS-compliant tape-and-reel form.
Applications include battery-powered wireless sensors, remote controls, home automation, and industrial monitoring.
Getting started: consult the official datasheet and reference designs from Silicon Labs, configure frequency, modulation, data rate, and power via SPI, and implement a RX/TX state machine in your MCU.

Features

Here are typical features of the SI4420BDY-T1-E3 (Silicon Labs sub‑GHz RF transceiver) summarized concisely:
- Multi-band ISM transceiver (commonly 315/433/868/915 MHz variants)
- Modulation: FSK/GFSK, and OOK/ASK support
- Data rate: up to several hundred kbps (typical ~250 kbps)
- Transmit power: adjustable, commonly +10 to +20 dBm
- Receiver sensitivity: very low (high RX sensitivity, e.g., around -110 dBm)
- Integrated RF front end with PLL/VCO; supports automatic frequency control
- Low-power operation with varied power modes; RX/TX currents and sleep current minimized
- On-chip packet engine: CRC, address filtering, length fields, FIFO handling
- Wake-on-Radio / event-driven operation
- SPI control interface with GPIOs and IRQ signaling
- Supply voltage: 1.8–3.6 V
- Temperature range: industrial (typ. -40 to +85 °C)
- Small package (QFN or similar) with RoHS compliance
Note: exact band, data rate, current figures, and packaging can vary by revision. For precise specs, refer to the official datasheet for the T1-E3 variant.

Package

The SI4420BDY-T1-E3 is supplied in a 6-pin SOT-23 package (SOT-23-6), tape-and-reel packaged for automated assembly.

Pinout

Pin count: 8 pins (SO-8/8-lead package).
Function: Dual N-channel enhancement-mode MOSFET (two independent N‑MOSFETs in one package) used for low-voltage power switching. Pins correspond to Gate1, Drain1, Source1, Gate2, Drain2, Source2 with the remaining pins/EPAD used for package drain/substrate and thermal/ground return per the datasheet.

Manufacturer

Manufacturer: Vishay Siliconix (Vishay Intertechnology) — part number SI4420BDY-T1-E3.
What kind of company: Vishay Intertechnology is an American multinational electronic components manufacturer (headquartered in Malvern, PA) that produces discrete semiconductors (MOSFETs, diodes, ICs) and passive components (resistors, capacitors, inductors).

Application

Si4420BDY-T1-E3 is a low-power sub‑GHz RF transceiver for ISM-band links. Application areas:
- Remote controls
- Wireless sensor networks and data loggers
- Home/building automation
- Industrial automation and telemetry
- Asset tracking and logistics
- Metering (electric/gas/water)
- Security systems and alarms
- Smart energy/IoT gateways