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SI4410BDY-T1-E3
MOSFET N-CH 30V 7.5A 8SO
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 13.5mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 5 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.4W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
概述
Description
The SI4410BDY-T1-E3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching circuits. It features low on-resistance (R_DS(on)), which enhances efficiency by minimizing energy loss during operation. The device can handle high currents and voltages, making it suitable for applications in consumer electronics, industrial equipment, and automotive systems.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 10A, depending on the thermal management. The SI4410BDY-T1-E3 is packaged in a compact SO-8 format, allowing for efficient use of space in circuitry. Its fast switching capabilities contribute to improved performance in power conversion applications.
Overall, this MOSFET is a reliable choice for engineers looking to optimize power efficiency and performance in their designs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 10A, depending on the thermal management. The SI4410BDY-T1-E3 is packaged in a compact SO-8 format, allowing for efficient use of space in circuitry. Its fast switching capabilities contribute to improved performance in power conversion applications.
Overall, this MOSFET is a reliable choice for engineers looking to optimize power efficiency and performance in their designs.
Features
The SI4410BDY-T1-E3 is a N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The device supports continuous drain current (I_D) up to 10A, depending on the thermal conditions.
3. On-Resistance (R_DS(on)): Low on-resistance of typically 0.014Ω at V_GS = 10V, which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1V to 2.5V, suitable for low-voltage applications.
5. Fast Switching Speed: Designed for high-speed operation, making it suitable for applications like DC-DC converters and motor drives.
6. Thermal Resistance: Good thermal performance with low junction-to-ambient thermal resistance, enhancing reliability in thermal management.
7. Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI4410BDY-T1-E3 suitable for various consumer and industrial applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The device supports continuous drain current (I_D) up to 10A, depending on the thermal conditions.
3. On-Resistance (R_DS(on)): Low on-resistance of typically 0.014Ω at V_GS = 10V, which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1V to 2.5V, suitable for low-voltage applications.
5. Fast Switching Speed: Designed for high-speed operation, making it suitable for applications like DC-DC converters and motor drives.
6. Thermal Resistance: Good thermal performance with low junction-to-ambient thermal resistance, enhancing reliability in thermal management.
7. Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI4410BDY-T1-E3 suitable for various consumer and industrial applications.
Package
The SI4410BDY-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) form factor, which features an 8-pin configuration. This package type is designed for surface mounting, providing a compact footprint suitable for various applications.
Pinout
The SI4410BDY-T1-E3 is a N-channel MOSFET designed for high-efficiency switching applications. It has a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate: Controls the MOSFET's switching.
2. Drain: Connects to the load; current flows out from this pin.
3. Source: Connects to ground or the negative side of the power supply.
4. Gate: (Second occurrence) For signal input or redundancy in design.
5. Drain: (Second occurrence) For load connection; allows for parallel configurations.
6. Source: (Second occurrence) For additional grounding or current path options.
7. N/C: Not connected; can be left open.
8. N/C: (Second occurrence) Not connected; can also be left open.
The SI4410BDY-T1-E3 is commonly used in power management and motor control applications, providing low R_DS(on) for efficient performance.
1. Gate: Controls the MOSFET's switching.
2. Drain: Connects to the load; current flows out from this pin.
3. Source: Connects to ground or the negative side of the power supply.
4. Gate: (Second occurrence) For signal input or redundancy in design.
5. Drain: (Second occurrence) For load connection; allows for parallel configurations.
6. Source: (Second occurrence) For additional grounding or current path options.
7. N/C: Not connected; can be left open.
8. N/C: (Second occurrence) Not connected; can also be left open.
The SI4410BDY-T1-E3 is commonly used in power management and motor control applications, providing low R_DS(on) for efficient performance.
Manufacturer
The SI4410BDY-T1-E3 is manufactured by Silicon Labs, a company known for designing and developing semiconductor solutions. Founded in 1996 and headquartered in Austin, Texas, Silicon Labs specializes in analog and mixed-signal integrated circuits, wireless and IoT (Internet of Things) technologies, and microcontrollers. The company serves a wide range of markets, including industrial, automotive, consumer electronics, and telecommunications, providing innovative solutions that enable connectivity and efficiency in electronic devices. Silicon Labs is recognized for its focus on low-power performance and high integration, making it a prominent player in the semiconductor industry.
Application
The SI4410BDY-T1-E3 is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor control, and power switching. Its low on-resistance and fast switching capabilities make it suitable for efficient power amplification in consumer electronics, industrial equipment, and automotive applications. Additionally, it is used in various communication devices for signal switching and amplification.
Equivalent
The SI4410BDY-T1-E3 is a low-power RF transceiver. Equivalent products include the ADF7021, NRF24L01, and the CC2500. Each of these offers similar functionality for wireless communication, but specifications may vary. Always check datasheets for compatibility in application requirements.
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