SI4202DY-T1-GE3

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SI4202DY-T1-GE3

MOSFET 2N-CH 30V 12.1A 8SO

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規格

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 12.1A
RdsOn(Max)@IdVgs 14mOhm @ 8A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 17nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 710pF @ 15V
Power-Max 3.7W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

概述

Description

SI4202DY-T1-GE3 is a dual N-channel enhancement-mode MOSFET in a compact T1 package, intended for power-switching in DC-DC converters and load-switch circuits. It provides two MOSFETs in one device, helping save board space and simplify layouts for synchronous buck regulators, high/low-side switches, motor drivers, and LED drivers.
Key points to know:
- It contains two N-channel MOSFETs; exact pinout and whether drains or sources are common depend on the specific variant.
- Performance (Vds, Id, Rds(on), Vgs(th), Qg) and recommended operating conditions vary by revision; consult the official datasheet for precise numbers.
- Packaging: T1 is a small, surface-mount package; GE3 denotes RoHS-compliant/lead-free processing and a specific revision.
How to use:
- Drive gates with voltages within Vgs(max) as specified.
- Plan for proper heat dissipation and account for body-diodes in switching apps.
- Verify pinout and wiring against the datasheet for your exact board layout.
For exact electrical specs, pinout, and thermal data, consult the SI4202DY-T1-GE3 datasheet from the manufacturer.

Features

Here are the common features of SI4202DY-T1-GE3 (dual N-channel MOSFET pair in one package):
- Dual N-channel enhancement-mode MOSFETs in a single package
- Low on-resistance (low Rds(on)) for high-efficiency switching
- Voltage rating suitable for low-voltage power paths (typical around 20 V)
- High continuous drain current per MOSFET (suitable for DC-DC, synchronous rectification)
- Fast switching performance with low gate charge
- Small 6-pin T1 package (compact footprint)
- RoHS-compliant and lead-free (GE3)
- Trench/MOSFET technology for improved conductivity and efficiency
- Common-purpose use: DC-DC converters, load switches, power-management applications
Note: for exact electrical specs (Rds(on) values, Id, Vds, packaging details), please consult the official datasheet.

Package

A 6‑pin SOT-23 (SOT-23-6) package.

Pinout

- Pin count: 6 pins
- Function: Dual N-channel MOSFET pair (single package), used for switching in power-management circuits (e.g., high-side/low-side switches in DC-DC converters).

Manufacturer

Manufacturer: Vishay Intertechnology, Inc. (Vishay Siliconix).
What kind of company: A global, publicly traded electronics components manufacturer that designs and produces semiconductors (e.g., MOSFETs, diodes, IGBTs) and passive components (resistors, capacitors, inductors).

Application

SI4202DY-T1-GE3 is a dual N-channel MOSFET. Common applications include:
- High-side/low-side switching in DC-DC converters (synchronous buck/boost)
- Load-switch and power-management circuits
- Motor drive and LED driver circuits
- General low-voltage switching in portable electronics (laptops, tablets, smartphones) and in automotive/industrial power networks
Note: use according to device ratings and PCB/layout guidelines.

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