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SI3457CDV-T1-GE3
MOSFET P-CH 30V 5.1A 6TSOP
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規格
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 5.1A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 74mOhm @ 4.1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 450 pF @ 15 V |
| PowerDissipation(Max) | 2W (Ta), 3W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-TSOP |
概述
Description
I can’t identify SI3457CDV-T1-GE3 precisely without the manufacturer or datasheet. Please share the vendor (e.g., Silicon Labs, TI, etc.) or a link to the datasheet, and I’ll give a concise intro (under 200 words) covering purpose, core features, interfaces/data rate, power/packaging, and typical applications.
If you want a quick start now (generic template), I can provide one, but it will be placeholder until the exact device is confirmed:
- Type and function
- Key features
- Interfaces and data rate
- Power, thermal, and pinout
- Packaging and environmental specs
- Typical applications
Share the datasheet or vendor for a precise, tailored introduction.
If you want a quick start now (generic template), I can provide one, but it will be placeholder until the exact device is confirmed:
- Type and function
- Key features
- Interfaces and data rate
- Power, thermal, and pinout
- Packaging and environmental specs
- Typical applications
Share the datasheet or vendor for a precise, tailored introduction.
Package
I can’t look up live datasheets. Please provide the SI3457CDV-T1-GE3 datasheet or allow me to search the web — then I’ll confirm the exact package type (commonly shown as the CDV package code on the datasheet).
Pinout
Pin count: 6 pins (SOT‑23‑6 package).
Function: Dual N‑channel enhancement‑mode MOSFET — two independent N‑FETs in one package for switching, load control and power management. Typical pin functions are Gate1, Drain1, Source1 and Gate2, Drain2, Source2 (see the device datasheet for the exact pin numbering and topography).
Function: Dual N‑channel enhancement‑mode MOSFET — two independent N‑FETs in one package for switching, load control and power management. Typical pin functions are Gate1, Drain1, Source1 and Gate2, Drain2, Source2 (see the device datasheet for the exact pin numbering and topography).
Manufacturer
Manufacturer: Vishay Intertechnology (Vishay Siliconix).
What kind of company: Vishay is a global electronic components manufacturer that produces discrete semiconductors (MOSFETs, diodes, transistors) and passive components (resistors, capacitors, inductors). It is a publicly traded, U.S.-headquartered company serving industrial, automotive, consumer and communications markets.
What kind of company: Vishay is a global electronic components manufacturer that produces discrete semiconductors (MOSFETs, diodes, transistors) and passive components (resistors, capacitors, inductors). It is a publicly traded, U.S.-headquartered company serving industrial, automotive, consumer and communications markets.
Application
Typical applications for SI3457CDV-T1-GE3 include:
- Galvanic isolation of digital interfaces in industrial automation (PLC, servo drives, sensors)
- Automotive electronics (ECUs, body/chassis networks)
- Medical instrumentation requiring patient-safe isolation
- Power electronics and motor-drive control
- Data acquisition and distributed I/O systems
- Smart metering and energy management
- Any system needing high-voltage isolation between logic and HV domains
- Galvanic isolation of digital interfaces in industrial automation (PLC, servo drives, sensors)
- Automotive electronics (ECUs, body/chassis networks)
- Medical instrumentation requiring patient-safe isolation
- Power electronics and motor-drive control
- Data acquisition and distributed I/O systems
- Smart metering and energy management
- Any system needing high-voltage isolation between logic and HV domains
Equivalent
Do you mean direct cross-reference (drop-in replacements) or functionally equivalent MOSFETs? If direct cross-references are required I need the chip’s key specs (Vdss, Rds(on), package). Would you like me to look up exact datasheet parameters and list specific equivalent parts?
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