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SI3440DV-T1-GE3
MOSFET N-CH 150V 1.2A 6TSOP
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規格
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.14W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | SI3440 |
概述
Description
The SI3440DV-T1-GE3 is likely a semiconductor component used in electronic circuits, such as a MOSFET or a diode. When dealing with specific part numbers like this, it's essential to consult the manufacturer's datasheet for detailed specifications, features, and applications. Key characteristics typically include voltage and current ratings, package type, switching speed, and thermal performance.
This component may be available from suppliers like Vishay, ON Semiconductor, or other reputable manufacturers, known for offering a range of discrete semiconductors. Such components are used in various applications, including power management, automotive electronics, and consumer electronics, where efficient switching and robust performance are needed. For engineers and designers, understanding the electrical and thermal characteristics of the SI3440DV-T1-GE3 is crucial for optimal integration into their projects. Always ensure compatibility with your circuit's requirements and consider any design notes or application guidelines provided by the manufacturer.
This component may be available from suppliers like Vishay, ON Semiconductor, or other reputable manufacturers, known for offering a range of discrete semiconductors. Such components are used in various applications, including power management, automotive electronics, and consumer electronics, where efficient switching and robust performance are needed. For engineers and designers, understanding the electrical and thermal characteristics of the SI3440DV-T1-GE3 is crucial for optimal integration into their projects. Always ensure compatibility with your circuit's requirements and consider any design notes or application guidelines provided by the manufacturer.
Features
The SI3440DV-T1-GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient power management in electronic devices. Key features include:
1. N-Channel MOSFET: It is an N-channel device, which means it conducts when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The device is designed with low on-resistance, enhancing its efficiency by minimizing power loss during operation.
3. High Current Capability: It supports a high current load, making it suitable for applications requiring significant power delivery.
4. Small Form Factor: The MOSFET is housed in a compact package, which is advantageous for space-constrained applications.
5. Fast Switching: It offers fast switching speeds, improving the efficiency of electronic circuits by reducing switching losses.
6. Thermal Performance: Enhanced thermal performance allows it to handle higher power levels while maintaining reliability.
7. Applications: Ideal for use in power management, DC-DC converters, and other applications requiring efficient power switching.
This combination of features makes the SI3440DV-T1-GE3 a versatile choice for designers looking to optimize power efficiency in electronic systems.
1. N-Channel MOSFET: It is an N-channel device, which means it conducts when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The device is designed with low on-resistance, enhancing its efficiency by minimizing power loss during operation.
3. High Current Capability: It supports a high current load, making it suitable for applications requiring significant power delivery.
4. Small Form Factor: The MOSFET is housed in a compact package, which is advantageous for space-constrained applications.
5. Fast Switching: It offers fast switching speeds, improving the efficiency of electronic circuits by reducing switching losses.
6. Thermal Performance: Enhanced thermal performance allows it to handle higher power levels while maintaining reliability.
7. Applications: Ideal for use in power management, DC-DC converters, and other applications requiring efficient power switching.
This combination of features makes the SI3440DV-T1-GE3 a versatile choice for designers looking to optimize power efficiency in electronic systems.
Package
The SI3440DV-T1-GE3 is a MOSFET component housed in a DPAK (TO-252) package.
Pinout
The SI3440DV-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is typically used in power management applications such as DC-DC converters, load switches, and power supply designs. The device features a single N-channel MOSFET.
In terms of pin count, the SI3440DV-T1-GE3 is encapsulated in a standard SOT-23 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will enable the MOSFET to conduct between the drain and source terminals.
2. Source (S): This is the terminal through which the MOSFET channel current flows when the device is turned on.
3. Drain (D): The drain is the terminal where the device outputs current when it is conducting.
The SI3440DV-T1-GE3 is designed for low-voltage applications and is appreciated for its low on-resistance characteristics, making it suitable for efficient power switching.
In terms of pin count, the SI3440DV-T1-GE3 is encapsulated in a standard SOT-23 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will enable the MOSFET to conduct between the drain and source terminals.
2. Source (S): This is the terminal through which the MOSFET channel current flows when the device is turned on.
3. Drain (D): The drain is the terminal where the device outputs current when it is conducting.
The SI3440DV-T1-GE3 is designed for low-voltage applications and is appreciated for its low on-resistance characteristics, making it suitable for efficient power switching.
Manufacturer
The SI3440DV-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, resistors, capacitors, and inductors, which are used in various electronic devices and systems across industries such as automotive, industrial, consumer electronics, telecommunications, and computing. Vishay is known for its innovation and reliability in electronic component manufacturing.
Application
The SI3440DV-T1-GE3 is a MOSFET transistor commonly used in power management applications. Its typical application areas include DC-DC converters, power supply units, motor drives, and battery protection circuits. It's particularly suited for use in portable electronics, consumer electronics, and industrial devices where efficient power switching and management are required. The component's low on-resistance and fast switching capabilities make it ideal for applications that demand high efficiency and compact size.
Equivalent
The SI3440DV-T1-GE3 is a P-channel MOSFET from Vishay. Equivalent products from other manufacturers might include similar P-channel MOSFETs with comparable voltage, current, and package specifications. Potential alternatives could be:
1. FDS6679 from ON Semiconductor
2. IRF7416 from Infineon
3. NTD2955 from Fairchild
Check datasheets to ensure compatibility.
1. FDS6679 from ON Semiconductor
2. IRF7416 from Infineon
3. NTD2955 from Fairchild
Check datasheets to ensure compatibility.
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