SCT3022KLGC11

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SCT3022KLGC11

SICFET N-CH 1200V 95A TO247N

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  • 製造商。 部分 #SCT3022KLGC11
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規格

Supplier Rohm Semiconductor
Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 95A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V
RdsOn(Max)@IdVgs 28.6mOhm @ 36A, 18V
Vgs(th)(Max)@Id 5.6V @ 18.2mA
GateCharge(Qg)(Max)@Vgs 178 nC @ 10 V
Vgs(Max) +22V, -4V
InputCapacitance(Ciss)(Max)@Vds 2879 pF @ 800 V
PowerDissipation(Max) 427W
OperatingTemperature 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247N

概述

Description

I’m not sure what SCT3022KLGC11 refers to. It could be a hardware part/model, a software library, or a course/code. Could you share the domain (electronics, software, education), the manufacturer or vendor, or a link? With that, I can give a precise, under-200-word introduction.
If you want a generic starter you can tailor:
- SCT3022KLGC11 is a model/kit in the SCT family designed for a specific function, featuring core components, interfaces, and peripherals typical for its category.
- Primary uses and applications depend on its domain (e.g., sensing, control, or learning).
- Key specs to note include power requirements, communication interfaces, memory/core type, and environmental limits.
- Typical workflow: obtain datasheet, identify pinouts/interfaces, set up development tools, and follow programming/debugging steps.
Share context or a link, and I’ll craft a precise intro.

Package

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