SCT2080KEC

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SCT2080KEC

SICFET N-CH 1200V 40A TO247

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規格

Part Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 18 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 800 V
Power Dissipation (Max) 262W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number SCT2080

概述

Description

The SCT2080KEC is a specific model of semiconductor, typically identified as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. It is designed to handle high power and high efficiency, making it suitable for switching and amplification in electronic devices. Key features of the SCT2080KEC may include low on-resistance, fast switching speed, and high current capacity, which contribute to reduced energy loss and improved overall performance in systems where it is employed.
This component is often used in power supply circuits, motor controllers, and other systems requiring efficient power management. The compact and robust design of the SCT2080KEC helps in minimizing space on circuit boards while maintaining reliability and performance under demanding conditions. It is important to refer to the specific datasheet provided by the manufacturer for detailed electrical characteristics, thermal properties, and application guidelines to ensure proper implementation in electronic designs.

Features

The SCT2080KEC is an Insulated Gate Bipolar Transistor (IGBT) module used primarily in power electronics applications. Key features include:
1. High Current Capacity: Designed to handle high current operations, making it suitable for industrial applications.
2. Low Saturation Voltage: Offers lower conduction losses, which enhances efficiency.
3. Fast Switching Speed: Improves performance in applications requiring rapid changes in power levels.
4. Robust Design: Provides high reliability and durability under demanding conditions.
5. Integrated Protection Features: Often includes features such as short-circuit and over-temperature protection to ensure safe operation.
6. Compact Packaging: Allows for easier integration into existing systems due to its smaller footprint.
7. High Voltage Rating: Suitable for applications involving high-voltage operations.
These features make the SCT2080KEC ideal for use in inverters, motor drives, and other power conversion systems where efficiency and reliability are crucial.

Package

The SCT2080KEC is typically available in a TO-220 package, which is a standard through-hole package type used for power transistors and similar components.

Pinout

The SCT2080KEC is a power MOSFET transistor. It typically comes in a TO-247 package, which generally has three pins. These pins are:
1. Gate (G): This is the control pin of the MOSFET. A voltage applied here regulates the current flow between the drain and source.
2. Drain (D): This pin is where the main current enters the MOSFET. The drain is connected to the load that is being controlled.
3. Source (S): This pin is where the main current exits the MOSFET. It is typically connected to the ground or the negative side of the supply.
The SCT2080KEC is used for switching and power management applications. It is designed to handle high voltages and currents, making it suitable for use in power converters, motor drives, and other high-power systems.

Manufacturer

The SCT2080KEC is manufactured by Sanken Electric Co., Ltd. Sanken is a Japanese company specializing in the manufacture of semiconductors, electronic components, and power systems. They produce a wide range of products, including power transistors, integrated circuits, LEDs, and power supplies, catering to various sectors such as automotive, consumer electronics, and industrial applications.

Application

The SCT2080KEC is a silicon carbide (SiC) power MOSFET designed for high-efficiency power conversion applications. It is commonly used in areas such as renewable energy systems (e.g., solar inverters), electric vehicle powertrains and charging infrastructure, industrial motor drives, and power supplies for telecommunications and data centers. Its superior thermal performance and high-frequency switching capabilities make it ideal for applications requiring compact, efficient, and robust power management solutions.

Equivalent

The SCT2080KEC is a silicon carbide (SiC) power MOSFET. Equivalent products include Wolfspeed’s C3M0075120K, ROHM’s SCT3080AL, and Infineon’s IMZ120R030M1, among others. These components are designed for high-efficiency power conversion in applications such as power supplies and motor drives. Always verify the specifications and pin configurations to ensure compatibility with your application.

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