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S29GL512P10FFIR10
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規格
| Brand | Infineon Technologies |
| Product Type | NOR Flash |
| Subcategory | Memory & Data Storage |
| Series | S29GL512P |
| Mounting Style | SMD/SMT |
| Interface Type | Parallel |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Supply Voltage - Min | 2.7 V |
| Supply Voltage - Max | 3.6 V |
| Memory Size | 512 Mbit |
| Package / Case | BGA-64 |
| Unit Weight | 0.006004 oz |
| Organization | 64 M x 8 |
| Packaging | Tray |
| Active Read Current - Max | 110 mA |
| Factory Pack Quantity:Factory Pack Quantity | 180 |
| Moisture Sensitive | Yes |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Data Bus Width | 8 bit |
| Speed | 100 ns |
| Timing Type | Asynchronous |
| Architecture | Sector |
| Memory Type | NOR |
概述
Description
The S29GL512P10FFIR10 is a 512 Megabit (64 Megabyte) NOR Flash memory device manufactured by Cypress Semiconductor (now part of Infineon Technologies). It utilizes a 65nm process technology and features a standard 3.0V operation. The device is designed for applications requiring reliable, high-density storage, such as in automotive, industrial, and consumer electronics.
Key features include:
- Memory Type: NOR Flash with a uniform sector architecture.
- Interface: Compatible with standard parallel interface.
- Access Time: Offers fast read speeds with a maximum access time of 100 ns.
- Write/Erase Cycles: Endurance of up to 100,000 program/erase cycles per sector.
- Data Retention: Typically retains data for over 20 years at 125°C.
The S29GL512P10FFIR10 is suitable for code and data storage, making it a versatile choice for embedded systems. Its reliability and performance make it ideal for applications where data integrity and longevity are critical.
Key features include:
- Memory Type: NOR Flash with a uniform sector architecture.
- Interface: Compatible with standard parallel interface.
- Access Time: Offers fast read speeds with a maximum access time of 100 ns.
- Write/Erase Cycles: Endurance of up to 100,000 program/erase cycles per sector.
- Data Retention: Typically retains data for over 20 years at 125°C.
The S29GL512P10FFIR10 is suitable for code and data storage, making it a versatile choice for embedded systems. Its reliability and performance make it ideal for applications where data integrity and longevity are critical.
Features
The S29GL512P10FFIR10 is a 512 Mb (64 MB) NOR Flash memory device from Spansion, featuring several key attributes:
1. Memory Density: 512 Mb capacity, suitable for a variety of applications.
2. Access Speed: Offers fast read access times, typically around 90 ns.
3. Interface: Supports a traditional parallel interface for easy integration into existing systems.
4. Multiple I/O Modes: Compatible with both standard and extended I/O modes, enhancing versatility.
5. Erase and Write Cycles: Endurance of up to 100,000 program/erase cycles per sector.
6. Data Retention: Maintains data integrity for over 20 years under typical conditions.
7. Sector Architecture: Organized in sectors for flexible erase operations, facilitating efficient memory management.
8. Low Power Consumption: Features low active power and standby power modes, making it energy-efficient.
9. Temperature Range: Available in commercial and industrial temperature versions for diverse applications.
These features make the S29GL512P10FFIR10 ideal for embedded systems, automotive applications, and general-purpose storage solutions.
1. Memory Density: 512 Mb capacity, suitable for a variety of applications.
2. Access Speed: Offers fast read access times, typically around 90 ns.
3. Interface: Supports a traditional parallel interface for easy integration into existing systems.
4. Multiple I/O Modes: Compatible with both standard and extended I/O modes, enhancing versatility.
5. Erase and Write Cycles: Endurance of up to 100,000 program/erase cycles per sector.
6. Data Retention: Maintains data integrity for over 20 years under typical conditions.
7. Sector Architecture: Organized in sectors for flexible erase operations, facilitating efficient memory management.
8. Low Power Consumption: Features low active power and standby power modes, making it energy-efficient.
9. Temperature Range: Available in commercial and industrial temperature versions for diverse applications.
These features make the S29GL512P10FFIR10 ideal for embedded systems, automotive applications, and general-purpose storage solutions.
Package
The S29GL512P10FFIR10 is packaged in a 48-pin TSOP (Thin Small Outline Package). This type of package is designed for surface mounting and is commonly used for memory devices.
Manufacturer
The manufacturer of the S29GL512P10FFIR10 is Silicon Storage Technology (SST), a subsidiary of Microchip Technology Inc. SST specializes in designing and manufacturing non-volatile memory solutions, primarily flash memory devices and related technologies. The company focuses on providing high-performance memory products for various applications, including consumer electronics, automotive, industrial, and telecommunications. Their offerings include NAND and NOR flash memory, which are used in a wide range of devices, from smartphones to embedded systems.
Application
The S29GL512P10FFIR10 is a 512Mb NOR Flash memory device commonly used in embedded systems, automotive applications, telecommunications, industrial control, and consumer electronics. It serves for code storage, firmware updates, and data retention in applications requiring non-volatile memory solutions, such as BIOS storage, medical devices, and networking equipment. Its features include fast read speeds and endurance suitable for frequent programming and erasing cycles.
Equivalent
Equivalent products to the S29GL512P10FFIR10 chip include the Micron MT29F512G08CBABA and the Spansion S29GL512P10FFIE2. These are also 512 Mb NOR flash memory devices, with similar specifications such as density, interface, and voltage. Always verify compatibility with specific application requirements before substitution.
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