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S29GL128P11FFIV23
IC FLASH 128MBIT PARALLEL 64FBGA
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規格
| Series | GL-P |
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 110ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
| Base Product Number | S29GL128 |
| Access Time | 110 ns |
概述
Description
The S29GL128P11FFIV23 is a high-performance flash memory chip from Macronix, part of the S29 series. It features 128 megabits (16 megabytes) of non-volatile storage, making it suitable for various applications like embedded systems, consumer electronics, and automotive devices.
This chip utilizes a single-level cell (SLC) architecture, ensuring reliable data retention and faster read/write speeds. It supports both parallel and serial interfaces, offering flexibility in design and integration. The operating voltage ranges from 2.7V to 3.6V, providing compatibility with a variety of systems.
Key features include fast access times, low power consumption, and high endurance, making it ideal for applications requiring frequent data updates. Its robust architecture supports multiple programming and erase cycles, ensuring durability over time. The S29GL128P11FFIV23 is optimized for high-speed operation, ensuring efficient performance in demanding environments. Overall, it is a reliable choice for developers looking to integrate high-capacity memory solutions into their projects.
This chip utilizes a single-level cell (SLC) architecture, ensuring reliable data retention and faster read/write speeds. It supports both parallel and serial interfaces, offering flexibility in design and integration. The operating voltage ranges from 2.7V to 3.6V, providing compatibility with a variety of systems.
Key features include fast access times, low power consumption, and high endurance, making it ideal for applications requiring frequent data updates. Its robust architecture supports multiple programming and erase cycles, ensuring durability over time. The S29GL128P11FFIV23 is optimized for high-speed operation, ensuring efficient performance in demanding environments. Overall, it is a reliable choice for developers looking to integrate high-capacity memory solutions into their projects.
Features
The S29GL128P11FFIV23 is a 128 Mb (16 MB) flash memory device from Spansion, designed for a variety of applications. Key features include:
1. NAND Flash Technology: Utilizes NOR flash architecture, providing fast read speeds and efficient random access.
2. Memory Density: Offers 128 Mbit capacity, suitable for embedded systems and consumer electronics.
3. Data Interface: Supports asynchronous and synchronous read modes, enhancing compatibility with various microcontrollers.
4. Voltage Range: Operates with a supply voltage of 2.7V to 3.6V, making it energy-efficient for battery-operated devices.
5. High Performance: Read speeds up to 90 ns, allowing for quick data retrieval.
6. Endurance and Retention: Supports up to 100,000 program/erase cycles and data retention of up to 20 years.
7. Programming Flexibility: Offers sector-based programming and erasing capabilities for efficient memory management.
This device is ideal for applications like firmware storage, code execution, and data logging in automotive, industrial, and consumer electronics.
1. NAND Flash Technology: Utilizes NOR flash architecture, providing fast read speeds and efficient random access.
2. Memory Density: Offers 128 Mbit capacity, suitable for embedded systems and consumer electronics.
3. Data Interface: Supports asynchronous and synchronous read modes, enhancing compatibility with various microcontrollers.
4. Voltage Range: Operates with a supply voltage of 2.7V to 3.6V, making it energy-efficient for battery-operated devices.
5. High Performance: Read speeds up to 90 ns, allowing for quick data retrieval.
6. Endurance and Retention: Supports up to 100,000 program/erase cycles and data retention of up to 20 years.
7. Programming Flexibility: Offers sector-based programming and erasing capabilities for efficient memory management.
This device is ideal for applications like firmware storage, code execution, and data logging in automotive, industrial, and consumer electronics.
Package
The S29GL128P11FFIV23 is packaged in a TSOP (Thin Small Outline Package) format. Specifically, it features a 48-pin TSOP package, designed for high-density applications.
Pinout
The S29GL128P11FFIV23 is a 128 Mb (16 MB) NOR Flash memory device from Cypress Semiconductor. It features a total of 48 pins. The key functions of these pins include:
1. Address Inputs (A0-A26): These pins are used to select memory addresses.
2. Data Inputs/Outputs (DQ0-DQ7): These 8 pins serve as the data bus for reading from and writing to the memory.
3. Chip Enable (CE#): Activates the device for read/write operations.
4. Write Enable (WE#): Controls write operations.
5. Output Enable (OE#): Controls the output data from the device.
6. Byte/Word Select (BYTE#): Selects between byte or word access.
7. Reset (RESET#): Resets the device.
8. VCC/VSS: Power supply and ground connections.
This device is commonly used in applications requiring non-volatile storage, such as embedded systems and firmware storage.
1. Address Inputs (A0-A26): These pins are used to select memory addresses.
2. Data Inputs/Outputs (DQ0-DQ7): These 8 pins serve as the data bus for reading from and writing to the memory.
3. Chip Enable (CE#): Activates the device for read/write operations.
4. Write Enable (WE#): Controls write operations.
5. Output Enable (OE#): Controls the output data from the device.
6. Byte/Word Select (BYTE#): Selects between byte or word access.
7. Reset (RESET#): Resets the device.
8. VCC/VSS: Power supply and ground connections.
This device is commonly used in applications requiring non-volatile storage, such as embedded systems and firmware storage.
Manufacturer
The S29GL128P11FFIV23 is manufactured by Spansion, a company that specializes in flash memory solutions. Spansion, which is now part of Cypress Semiconductor (a subsidiary of Infineon Technologies), focuses on providing non-volatile memory products, including NOR flash memory, for a variety of applications such as automotive, industrial, and consumer electronics. Their products are used in systems requiring reliable data storage and fast access times.
Application
The S29GL128P11FFIV23 is a 128 Mb NOR flash memory chip commonly used in embedded systems. Its application areas include consumer electronics, automotive systems, industrial control, networking equipment, and telecommunications. It supports code storage, firmware updates, and data logging, enabling reliable performance in diverse applications requiring non-volatile memory.
Equivalent
The S29GL128P11FFIV23 chip is a 128Mb NOR flash memory device. Equivalent products include the Micron MT28EW128ABA and the Intel StrataFlash series. Other alternatives may include the Winbond W29GL128 and the Spansion S29GL128N. Always verify compatibility based on specific application requirements.
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