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S28HS512TGABHB010
IC FLASH 512MBIT SPI/OCTL 24FBGA
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- 資料表 S28HS512TGABHB010 DataSheet
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規格
| Series | SEMPER™ |
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR (SLC) |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | SPI - Octal I/O |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 1.7ms |
| Access Time | 5.45 ns |
| Voltage - Supply | 1.7V ~ 2V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 24-VBGA |
| Supplier Device Package | 24-FBGA (6x8) |
| Base Product Number | S28HS512 |
概述
Description
The S28HS512TGABHB010 is a high-performance 512 Mb (64 MB) NOR flash memory chip designed by Cypress Semiconductor, now part of Infineon Technologies. It features a parallel interface, facilitating rapid data access and efficient read/erase operations. The chip operates on a voltage range of 2.7V to 3.6V, making it suitable for low-power applications.
Key characteristics include fast random access times, with read speeds reaching up to 85 ns, and support for both asynchronous and synchronous operations. The S28HS512 is commonly used in a variety of applications, including consumer electronics, automotive systems, and industrial devices, requiring reliable non-volatile memory solutions for firmware storage or data logging.
With robust endurance and data retention capabilities, this flash memory is ideal for applications that demand longevity and durability. Its integration into a design can enhance performance while ensuring the longevity of critical data storage.
Key characteristics include fast random access times, with read speeds reaching up to 85 ns, and support for both asynchronous and synchronous operations. The S28HS512 is commonly used in a variety of applications, including consumer electronics, automotive systems, and industrial devices, requiring reliable non-volatile memory solutions for firmware storage or data logging.
With robust endurance and data retention capabilities, this flash memory is ideal for applications that demand longevity and durability. Its integration into a design can enhance performance while ensuring the longevity of critical data storage.
Features
The S28HS512TGABHB010 is a 512 Mb (64 MB) NOR Flash memory device from Cypress Semiconductor. Key features include:
- Memory Density: 512 Mb capacity.
- Interface: Supports parallel interface, enabling high-speed data access.
- Operating Voltage: Typically operates at 3.0V to 3.6V, with specific I/O voltage options.
- Speed: Fast access times, typically around 70 ns, suitable for high-performance applications.
- Endurance: Supports a minimum of 100,000 program/erase cycles, ensuring durability over time.
- Data Retention: Guaranteed data retention of up to 20 years.
- Block Architecture: Includes a flexible block architecture, allowing for efficient memory management.
- Write Protection: Features multiple levels of write protection for data security.
- Applications: Ideal for embedded applications, automotive systems, and consumer electronics requiring reliable non-volatile storage.
This combination of features makes the S28HS512TGABHB010 suitable for various applications requiring durable, high-performance memory solutions.
- Memory Density: 512 Mb capacity.
- Interface: Supports parallel interface, enabling high-speed data access.
- Operating Voltage: Typically operates at 3.0V to 3.6V, with specific I/O voltage options.
- Speed: Fast access times, typically around 70 ns, suitable for high-performance applications.
- Endurance: Supports a minimum of 100,000 program/erase cycles, ensuring durability over time.
- Data Retention: Guaranteed data retention of up to 20 years.
- Block Architecture: Includes a flexible block architecture, allowing for efficient memory management.
- Write Protection: Features multiple levels of write protection for data security.
- Applications: Ideal for embedded applications, automotive systems, and consumer electronics requiring reliable non-volatile storage.
This combination of features makes the S28HS512TGABHB010 suitable for various applications requiring durable, high-performance memory solutions.
Package
The S28HS512TGABHB010 is packaged in a TSOP (Thin Small Outline Package) type. This package is designed for high-density memory devices, offering a compact footprint suitable for various applications in consumer electronics and computing.
Pinout
The S28HS512TGABHB010 is a high-performance NAND flash memory device with a pin count of 48 pins. It is designed for applications requiring high-density storage, such as smartphones, tablets, and other embedded systems.
The primary functions of the S28HS512TGABHB010 include data storage, read and write operations, and block management. It utilizes a serial Peripheral Interface (SPI) for communication, supporting multiple modes of operation, and offers features like error correction and wear leveling to enhance reliability and longevity. This NAND flash device provides a capacity of 512 Mb (megabits) and is optimized for fast data transfer rates and efficient power consumption.
Overall, the S28HS512TGABHB010 serves as a versatile and efficient memory solution in various electronic applications.
The primary functions of the S28HS512TGABHB010 include data storage, read and write operations, and block management. It utilizes a serial Peripheral Interface (SPI) for communication, supporting multiple modes of operation, and offers features like error correction and wear leveling to enhance reliability and longevity. This NAND flash device provides a capacity of 512 Mb (megabits) and is optimized for fast data transfer rates and efficient power consumption.
Overall, the S28HS512TGABHB010 serves as a versatile and efficient memory solution in various electronic applications.
Manufacturer
The manufacturer of the S28HS512TGABHB010 is Cypress Semiconductor Corporation, which is a part of Infineon Technologies AG. Cypress is known for producing a wide range of semiconductor products, including memory solutions, microcontrollers, and connectivity solutions. The company specializes in non-volatile memory technologies such as Flash, SRAM, and EEPROM, catering to various industries including automotive, industrial, and consumer electronics. Cypress is recognized for its innovative products that support applications in IoT, embedded systems, and digital consumer devices. In 2020, Cypress was acquired by Infineon Technologies, a leading global semiconductor manufacturer based in Germany, further expanding its capabilities and market reach.
Application
The S28HS512TGABHB010 is a high-density NAND flash memory device used in various applications, including mobile devices, consumer electronics, automotive systems, and industrial equipment. It is suitable for data storage in smartphones, tablets, SSDs, and IoT devices, providing high performance and reliability for data-intensive applications.
Equivalent
The S28HS512TGABHB010 chip is a high-performance NOR Flash memory. Equivalent products include the Micron MT29F512G08CBABA, Intel E28F512P30, and Winbond W25Q512JV. These alternatives provide similar specifications such as storage capacity, speed, and interface options, but it's advisable to check specific datasheets for compatibility and features.
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