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RUR040N02TL
MOSFET N-CH 20V 4A TSMT3
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規格
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSMT3 |
| Package / Case | SC-96 |
| Base Product Number | RUR040 |
概述
Description
RUR040N02TL is a part designation typically used to identify a specific type of electronic component, often within the realm of semiconductors or integrated circuits. This designation can refer to a specific model or version of a product manufactured by a company. To understand its exact specifications, features, and applications, one would usually refer to the manufacturer’s datasheet or product documentation. These documents provide critical information such as electrical characteristics, mechanical dimensions, pin configurations, and application guidelines, which are essential for engineers and designers when integrating the component into their projects. If you have a specific context or application in mind for RUR040N02TL, please provide more details for a more tailored response.
Features
The RUR040N02TL is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for low to medium voltage applications.
2. Continuous Drain Current: Capable of handling up to 40A, providing robust performance in high-current applications.
3. Low R_DS(on): Features a low on-resistance, typically around 0.025 ohms, which enhances efficiency by reducing conduction losses.
4. Fast Switching Speed: Designed for fast switching applications, improving performance in PWM (Pulse Width Modulation) and other high-frequency operations.
5. Thermal Performance: Comes in a TO-220 package, allowing for effective heat dissipation, crucial for maintaining reliability under high loads.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, facilitating better drive with standard logic-level signals.
Overall, the RUR040N02TL is ideal for applications in power supplies, motor drivers, and energy-efficient systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for low to medium voltage applications.
2. Continuous Drain Current: Capable of handling up to 40A, providing robust performance in high-current applications.
3. Low R_DS(on): Features a low on-resistance, typically around 0.025 ohms, which enhances efficiency by reducing conduction losses.
4. Fast Switching Speed: Designed for fast switching applications, improving performance in PWM (Pulse Width Modulation) and other high-frequency operations.
5. Thermal Performance: Comes in a TO-220 package, allowing for effective heat dissipation, crucial for maintaining reliability under high loads.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, facilitating better drive with standard logic-level signals.
Overall, the RUR040N02TL is ideal for applications in power supplies, motor drivers, and energy-efficient systems.
Package
The RUR040N02TL is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing efficient heat dissipation and robust performance in electronic circuits.
Pinout
The RUR040N02TL is a N-channel MOSFET designed for use in power applications. It has a total of 3 pins.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is typically connected to ground in N-channel MOSFET applications, serving as the return path for current flowing through the load connected to the drain.
The RUR040N02TL is rated for a maximum continuous drain current of 40A and a drain-source voltage of 20V. It is commonly used in power switching applications, including motor drives and power supplies.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is typically connected to ground in N-channel MOSFET applications, serving as the return path for current flowing through the load connected to the drain.
The RUR040N02TL is rated for a maximum continuous drain current of 40A and a drain-source voltage of 20V. It is commonly used in power switching applications, including motor drives and power supplies.
Manufacturer
The RUR040N02TL is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor is a leading global supplier of electronic components, providing a wide range of products including power management, analog, and logic devices, as well as sensors and connectivity solutions. Founded in 1999, the company serves various sectors such as automotive, industrial, and consumer electronics, focusing on energy efficiency and sustainability. With a strong emphasis on innovation and product development, ON Semiconductor plays a significant role in the semiconductor industry, contributing to advancements in technology and electronics.
Application
The RUR040N02TL is a high-power N-channel MOSFET used in various applications, including power supplies, motor control, and DC-DC converters. Its low RDS(on) and high-speed switching capabilities make it suitable for automotive applications, renewable energy systems, and industrial automation. It is also applicable in inverter circuits and power management systems due to its efficiency and reliability in high-current environments.
Equivalent
The RUR040N02TL is a high-speed Schottky diode. Equivalent products include the MBR4045, 1N5820, and SB0402-10. Always verify specifications such as voltage, current rating, and package type to ensure compatibility in your application.
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