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RUM002N05T2L
MOSFET N-CH 50V 200MA VMT3
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規格
| Part Status | Active |
| Base Product Number | RUM002 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VMT3 |
| Package | SOT-723 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
RUM002N05T2L appears to be a specific code or identifier, possibly related to a product, course, or program. Without additional context, it's challenging to provide a detailed explanation. If it pertains to a particular field, such as education, technology, or manufacturing, more information would help clarify its meaning. Please provide further details or context regarding RUM002N05T2L for a more precise response.
Features
The RUM002N05T2L is a compact and efficient power management IC designed for various applications. Key features include:
1. Input Voltage Range: Supports a wide input voltage range, making it versatile for different power sources.
2. High Efficiency: Optimized for low power consumption, reducing heat generation and improving overall system efficiency.
3. Integrated Circuit Design: Combines multiple functionalities in a single package, saving space on PCB layouts.
4. Thermal Protection: Equipped with built-in thermal shutdown features, ensuring reliable operation under high temperature conditions.
5. Low Quiescent Current: Minimizes power loss during standby mode, ideal for battery-operated devices.
6. Output Current Handling: Capable of delivering substantial output current for demanding applications.
7. Compact Package: Available in a small form factor, facilitating integration into space-constrained designs.
This device is suitable for use in consumer electronics, industrial equipment, and automotive applications, among others.
1. Input Voltage Range: Supports a wide input voltage range, making it versatile for different power sources.
2. High Efficiency: Optimized for low power consumption, reducing heat generation and improving overall system efficiency.
3. Integrated Circuit Design: Combines multiple functionalities in a single package, saving space on PCB layouts.
4. Thermal Protection: Equipped with built-in thermal shutdown features, ensuring reliable operation under high temperature conditions.
5. Low Quiescent Current: Minimizes power loss during standby mode, ideal for battery-operated devices.
6. Output Current Handling: Capable of delivering substantial output current for demanding applications.
7. Compact Package: Available in a small form factor, facilitating integration into space-constrained designs.
This device is suitable for use in consumer electronics, industrial equipment, and automotive applications, among others.
Package
The RUM002N05T2L is typically packaged in a surface-mount device (SMD) format. This allows for easy integration onto printed circuit boards (PCBs) in compact electronic applications.
Pinout
The RUM002N05T2L is a device manufactured by ON Semiconductor, specifically a power MOSFET. It features a total of 5 pins. The primary functions of these pins are as follows:
1. Gate (G) - This is the input pin that controls the MOSFET's switching operation.
2. Drain (D) - This is the output pin where the load is connected; the current flows out from this pin when the MOSFET is on.
3. Source (S) - This pin serves as the reference point for the drain current and is typically connected to ground in low-side switching applications.
In summary, the RUM002N05T2L features 5 pins for gate, drain, and source connections, facilitating its operation as an efficient power switch in various electronic applications.
1. Gate (G) - This is the input pin that controls the MOSFET's switching operation.
2. Drain (D) - This is the output pin where the load is connected; the current flows out from this pin when the MOSFET is on.
3. Source (S) - This pin serves as the reference point for the drain current and is typically connected to ground in low-side switching applications.
In summary, the RUM002N05T2L features 5 pins for gate, drain, and source connections, facilitating its operation as an efficient power switch in various electronic applications.
Manufacturer
The RUM002N05T2L is manufactured by Rohm Semiconductor. Rohm is a global company specializing in the design and production of semiconductor devices and electronic components. Founded in 1958 and headquartered in Kyoto, Japan, Rohm operates in various sectors, including automotive, industrial, consumer electronics, and telecommunications. The company is known for its innovation in analog, digital, and mixed-signal semiconductor solutions, as well as power management devices. Rohm focuses on delivering high-quality products that meet the evolving needs of technology across diverse applications.
Application
RUM002N05T2L is a high-performance RF transceiver commonly used in wireless communication applications. Its primary areas include industrial automation, smart metering, remote monitoring, and Internet of Things (IoT) devices. Additionally, it is suitable for applications requiring low-power consumption and reliable data transmission, such as home automation systems and asset tracking.
Equivalent
The RUM002N05T2L is a power MOSFET. Equivalent products may include the Infineon BSC012N04LS G, NXP PSMN2R0-30, or Vishay SiR462DP. Always check the datasheets for specific characteristics like voltage rating, current rating, and RDS(on) to ensure compatibility.
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