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RFD16N05LSM9A

Name: RFD16N05LSM9A
Rating: 4.7 (12 reviews)

MOSFET N-CH 50V 16A TO252AA

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規格

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	50 V
Current-ContinuousDrain(Id)@25°C	16A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4V, 5V
RdsOn(Max)@IdVgs	47mOhm @ 16A, 5V
Vgs(th)(Max)@Id	2V @ 250mA
GateCharge(Qg)(Max)@Vgs	80 nC @ 10 V
Vgs(Max)	±10V
PowerDissipation(Max)	60W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	TO-252AA

概述

Description

RFD16N05LSM9A is a logic‑level N‑channel power MOSFET used as a switching element in power electronics (e.g., DC‑DC converters, motor drivers, load switches). The part number suggests a ~50 V drain‑source rating and about 16 A continuous current, with low on‑resistance for efficient switching, in a surface‑mount package.
Key points to check in the datasheet:
- VDS (voltage rating) and ID (continuous current)
- RDS(on) at gate voltages of 4.5–10 V (and/or logic-level drive)
- VGS(th), Qg (gate charge), and gate drive requirements
- Thermal characteristics (RθJA) and packaging
Typical usage:
- Use as a low‑side or high‑side switch with proper gate drive
- Include heat sinking as needed
- Protect with appropriate gate resistors, TVS diodes, and, for inductive loads, a flyback diode
For exact ratings and characteristics, consult the manufacturer’s datasheet.

Features

RFD16N05LSM9A is an N-channel enhancement-mode MOSFET. Key features:
- Vds: 50 V; Id: 16 A
- Low on-resistance: ~50 mΩ (typ) at typical gate drive
- Logic-level gate: fully on with Vgs around 4.5 V (gate threshold ~1–2.5 V)
- Fast switching with low gate charge
- Trench MOSFET with robust intrinsic body diode and rugged switching
- RoHS-compliant, surface-mount package (SM/compact Power package)
- Suitable for low-voltage switching, DC-DC converters, motor drives, and power-switching applications
Note: for exact electrical specs (tolerances, switching characteristics, package type) consult the datasheet.

Package

I can’t verify that specific part offline. I don’t have internet access to check the manufacturer’s datasheet—please provide the datasheet or allow me to look it up and I’ll confirm the exact package type.

Pinout

RFD16N05LSM9A is an N‑channel enhancement MOSFET with 3 electrical pins (plus a metal tab/pad). Functions:
- Pin 1: Gate (control terminal — voltage applied here turns the FET on/off)
- Pin 2: Drain (current input/output; often tied to the package tab/thermal pad)
- Pin 3: Source (current return/ground reference)
It is used as a low‑side or high‑side switch or for general switching/amplification in power circuits (tab/board pad is typically the drain and provides thermal dissipation).

Manufacturer

Manufacturer: STMicroelectronics.
What kind of company: STMicroelectronics is a multinational semiconductor manufacturer (Franco‑Italian) that designs and produces integrated circuits and discrete semiconductor devices—including power MOSFETs, microcontrollers, analog ICs, sensors and other electronic components.

Application

Primarily a high-side/low-side N-channel MOSFET for switching power in:
- Automotive and industrial motor drives
- Switch-mode power supplies and DC-DC converters
- Solar inverters and renewable-energy electronics
- Power management in consumer/industrial equipment
- Load switches and solid-state relays
- UPS and battery-powered systems
(Assumes typical 60V, ~16A class MOSFETs; check datasheet for exact ratings.)

Equivalent

Use any 50–60 V, logic‑level N‑channel MOSFET with equal/better ID and RDS(on). Common substitutes: STP16NF06L (ST), IRLZ44N (Infineon/IR), IRFZ44N, BSC16N50NS3 (Infineon SMD). Verify VDS/ID, RDS(on), VGS(th), package and pinout before replacing.