圖片僅供參考
PSMN8R2-80YS
MOSFETs
- 製造商
- 製造商。 部分 #PSMN8R2-80YS
- 包
- 資料表
- 有現貨的11700
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
概述
Description
PSMN8R2-80YS appears to refer to a specific model or component within a technical or engineering context. However, without additional context, it is difficult to provide a precise introduction. Typically, designations like this can refer to products such as electronic components, machinery parts, or specialized software tools.
In general, an introduction to a component like PSMN8R2-80YS would include key specifications such as its intended application, performance characteristics (like voltage rating, current capacity, or efficiency), and any relevant standards or compliance information. This information is crucial for users to understand how to integrate the component into their projects effectively.
For more accurate details, it would be advisable to consult the manufacturer's documentation or product datasheet, which would provide comprehensive insights into the features, applications, and technical specifications of PSMN8R2-80YS.
In general, an introduction to a component like PSMN8R2-80YS would include key specifications such as its intended application, performance characteristics (like voltage rating, current capacity, or efficiency), and any relevant standards or compliance information. This information is crucial for users to understand how to integrate the component into their projects effectively.
For more accurate details, it would be advisable to consult the manufacturer's documentation or product datasheet, which would provide comprehensive insights into the features, applications, and technical specifications of PSMN8R2-80YS.
Features
The PSMN8R2-80YS is a high-performance N-channel MOSFET designed for applications requiring efficient switching and power management. Key features include:
1. Voltage Rating: Maximum drain-source voltage of 80V, suitable for various power applications.
2. Current Rating: Continuous drain current of 70A, enabling high-load handling.
3. RDS(on): Low on-resistance (approximately 8.5 mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate voltage required for operation, ensuring compatibility with low-voltage drive circuits.
5. Fast Switching Speed: Optimized for rapid switching, ideal for high-frequency applications such as DC-DC converters and motor drives.
6. Thermal Performance: Robust thermal characteristics, allowing effective heat dissipation and reliability in demanding environments.
7. Package Type: Available in a TO-220 package, facilitating easy heat sinking and assembly.
These features make the PSMN8R2-80YS suitable for automotive, industrial, and consumer electronics applications where efficiency and performance are critical.
1. Voltage Rating: Maximum drain-source voltage of 80V, suitable for various power applications.
2. Current Rating: Continuous drain current of 70A, enabling high-load handling.
3. RDS(on): Low on-resistance (approximately 8.5 mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate voltage required for operation, ensuring compatibility with low-voltage drive circuits.
5. Fast Switching Speed: Optimized for rapid switching, ideal for high-frequency applications such as DC-DC converters and motor drives.
6. Thermal Performance: Robust thermal characteristics, allowing effective heat dissipation and reliability in demanding environments.
7. Package Type: Available in a TO-220 package, facilitating easy heat sinking and assembly.
These features make the PSMN8R2-80YS suitable for automotive, industrial, and consumer electronics applications where efficiency and performance are critical.
Package
The PSMN8R2-80YS is packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The PSMN8R2-80YS is an N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in various electronic applications. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which current exits.
3. Source (S) - The terminal through which current enters.
The other pins may include additional connections for specific applications, such as thermal management or protection features. The PSMN8R2-80YS is known for its low RDS(on) and high current handling capabilities, making it suitable for power management and inverter applications in automotive and industrial sectors.
For precise pin assignments and further specifications, always refer to the manufacturer's datasheet.
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which current exits.
3. Source (S) - The terminal through which current enters.
The other pins may include additional connections for specific applications, such as thermal management or protection features. The PSMN8R2-80YS is known for its low RDS(on) and high current handling capabilities, making it suitable for power management and inverter applications in automotive and industrial sectors.
For precise pin assignments and further specifications, always refer to the manufacturer's datasheet.
Manufacturer
The PSMN8R2-80YS is manufactured by Nexperia, a global semiconductor company that specializes in producing discrete, logic, and MOSFET components. Nexperia focuses on high-performance and energy-efficient products for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in manufacturing semiconductor solutions, and it emphasizes reliability and quality in its offerings. Nexperia operates with a commitment to innovation and sustainability, serving a wide range of markets worldwide.
Application
PSMN8R2-80YS is a power MOSFET typically used in applications such as power management, motor control, battery management systems, and DC-DC converters. Its high efficiency and switching speed make it suitable for renewable energy systems, electric vehicles, and consumer electronics.
Equivalent
The PSMN8R2-80YS is an N-channel MOSFET; equivalent products include the IRF3205, STP80NF80, and FQP80N80. Ensure to check specific parameters like V_DS, I_D, and R_DS(on) for compatibility in your application. Always consult the datasheets for precise comparisons.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FZBI-08Q
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25V1635FM2I
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix