圖片僅供參考
PSMN2R4-30MLD
- 製造商
- 製造商。 部分 #PSMN2R4-30MLD
- 包
- 資料表
- 有現貨的2736
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Technology | Si |
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Package / Case | LFPAK-33-8 |
概述
Description
PSMN2R4-30MLD refers to a specific formulation or product, potentially in the context of pharmaceuticals, biotechnology, or a similar field. PSMN2 could denote a particular protein, gene, or molecular compound, while "R4" might indicate a variant or modification. The "30MLD" likely specifies a volume or concentration, suggesting this is a solution or preparation intended for research or therapeutic use.
In a research context, such formulations could be utilized in studies related to gene expression, protein function, or disease mechanisms. Understanding the properties and applications of PSMN2R4-30MLD is essential for researchers aiming to explore its biological significance or therapeutic potential. Further details would be necessary to provide more specific applications or implications of PSMN2R4-30MLD.
In a research context, such formulations could be utilized in studies related to gene expression, protein function, or disease mechanisms. Understanding the properties and applications of PSMN2R4-30MLD is essential for researchers aiming to explore its biological significance or therapeutic potential. Further details would be necessary to provide more specific applications or implications of PSMN2R4-30MLD.
Features
The PSMN2R4-30MLD is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 60A, facilitating high power operations.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, allowing for effective drive with low gate voltage levels.
5. Fast Switching Speed: Designed for rapid switching, which is beneficial in high-frequency applications.
6. Package Type: Available in a DPAK package, providing good thermal performance and ease of mounting.
Overall, the PSMN2R4-30MLD is ideal for power management, motor control, and various applications in consumer electronics and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 60A, facilitating high power operations.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, allowing for effective drive with low gate voltage levels.
5. Fast Switching Speed: Designed for rapid switching, which is beneficial in high-frequency applications.
6. Package Type: Available in a DPAK package, providing good thermal performance and ease of mounting.
Overall, the PSMN2R4-30MLD is ideal for power management, motor control, and various applications in consumer electronics and automotive systems.
Package
The PSMN2R4-30MLD is typically packaged in a surface-mount device (SMD) format, specifically in a DPAK or similar package type. This packaging allows for efficient thermal management and compact design in electronic applications.
Pinout
The PSMN2R4-30MLD is an N-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S) - This pin is where the current enters the MOSFET when it is conducting.
4. Body (B) - Typically internally connected to the source, it acts as a substrate for the device.
The PSMN2R4-30MLD is designed for applications in power management and switching and is known for its low on-resistance and high-speed performance.
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S) - This pin is where the current enters the MOSFET when it is conducting.
4. Body (B) - Typically internally connected to the source, it acts as a substrate for the device.
The PSMN2R4-30MLD is designed for applications in power management and switching and is known for its low on-resistance and high-speed performance.
Manufacturer
The PSMN2R4-30MLD is manufactured by Nexperia, a global semiconductor company that specializes in discrete, logic, and MOSFET components. Nexperia focuses on high-volume manufacturing and is known for producing reliable, high-performance products for various applications, including automotive, industrial, and consumer electronics. The company emphasizes quality and efficiency in its manufacturing processes, leveraging its expertise in semiconductor technology to deliver innovative solutions. Nexperia was formed as a spin-off from NXP Semiconductors and operates with a strong commitment to sustainability and operational excellence.
Application
PSMN2R4-30MLD is a power semiconductor module commonly used in various applications such as electric vehicles, renewable energy systems (like solar inverters), motor drives, and industrial automation. Its high efficiency and thermal management capabilities make it suitable for high-performance power conversion and control in these areas.
Equivalent
The PSMN2R4-30MLD is a N-channel MOSFET designed for high-speed switching applications. Equivalent products include:
- IRF3205
- STP30NF10
- FQP30N06L
- BSC030N06LS
Always verify specifications such as voltage, current, and RDS(on) to ensure suitability for your application.
- IRF3205
- STP30NF10
- FQP30N06L
- BSC030N06LS
Always verify specifications such as voltage, current, and RDS(on) to ensure suitability for your application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FZBI-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25U25645GXDI00
Macronix
-
MX29F040CQI-70G
Macronix