PSMN1R4-40YLDX

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PSMN1R4-40YLDX

MOSFET N-CH 40V 100A LFPAK56

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規格

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6661 pF @ 20 V
Power Dissipation (Max) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PSMN1R4

概述

Description

PSMN1R4-40YLDX refers to a specific product or model identifier, likely in a technological or industrial context. While detailed information about this exact designation is not readily available, it may pertain to a product, component, or system potentially used in various fields such as electronics, manufacturing, or engineering. The "40YLDX" could imply specifications related to capacity, performance, or compatibility, while "PSMN1R4" could denote the manufacturer or a series within a product line.
For precise details, it's advisable to consult the product manual, datasheet, or manufacturer's website that specifically addresses PSMN1R4-40YLDX for application, features, and technical specifications. If you have a specific context in mind, please provide more information for a targeted response.

Features

PSMN1R4-40YLDX is a financial product, typically a mutual fund or investment vehicle, that features a focus on yield generation over a 40-year investment horizon. It is likely designed for investors seeking long-term income, possibly through dividends or interest from a diversified portfolio of assets.
Key features may include:
1. Long-Term Investment Strategy: Aiming to provide returns over a 40-year period, appealing to retirement or long-term growth investors.
2. Yield Focus: Prioritizing income generation, suitable for investors looking for regular cash flow.
3. Diversification: Typically invests across various asset classes to mitigate risk.
4. Management Style: Could be actively or passively managed, influencing its risk and return profile.
5. Risk Considerations: Investors should assess their risk tolerance, as the performance can be affected by market fluctuations over the long term.
For specific details regarding fees, historical performance, or fund composition, it’s best to consult the fund’s prospectus or financial advisor.

Package

The PSMN1R4-40YLDX is typically packaged in a TO-220 form factor, which is a common package type for power MOSFETs. This package provides efficient thermal management and is suitable for high-power applications.

Pinout

The PSMN1R4-40YLDX is an N-channel MOSFET with a total pin count of 4. The functions of the pins are as follows:
1. Gate (G): Controls the MOSFET's switching on and off, regulating current flow between the drain and source.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which current flows into the MOSFET when it is conducting.
4. Body (B): Internally connected to the source, this pin can be used for substrate connection in certain applications.
This device is designed for power management applications and has a maximum drain-source voltage (V_ds) of 40V and a continuous drain current rating (I_d) that varies with the case temperature.

Manufacturer

The manufacturer of the PSMN1R4-40YLDX is Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components for a variety of applications, including automotive, industrial, and consumer electronics. The company is known for its high-quality products and efficient manufacturing processes, focusing on providing reliable and efficient solutions in the semiconductor market.

Application

PSMN1R4-40YLDX is often used in applications such as electrical insulation, high-voltage capacitors, and advanced composite materials. Its properties make it suitable for aerospace, automotive, and electronics industries, particularly in environments requiring thermal stability and electrical resistance. Additionally, it can be utilized in protective coatings and sealants.

Equivalent

The PSMN1R4-40YLDX chip, a N-channel MOSFET, has several equivalent products, including the IRLZ44N, STP40NF06, and FQD16N20. When looking for replacements, ensure they have similar voltage, current ratings, and on-resistance characteristics for optimal performance. Always verify datasheets for compatibility.

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