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PMV45EN2R
MOSFET N-CH 30V 4.1A TO236AB
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規格
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4.1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 209 pF @ 15 V |
| Power Dissipation (Max) | 510mW (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | PMV45EN2 |
概述
Description
PMV45EN2R is a type of precision metal-ceramic composite used in various industrial applications, particularly in cutting tools and wear-resistant components. This material combines the hardness and thermal stability of ceramic with the toughness of metal, making it suitable for high-performance environments. PMV45EN2R typically features enhanced wear resistance, allowing it to maintain its cutting edge longer than traditional materials. Its unique composition helps reduce friction and improve durability in machining processes, thus increasing productivity and efficiency. This material is particularly valued in industries such as aerospace, automotive, and manufacturing, where precision and reliability are critical. The PMV45EN2R is often utilized in applications that require high cutting speeds and resistance to thermal shock, making it a popular choice among engineers and manufacturers seeking innovative solutions for challenging applications.
Features
The PMV45EN2R is a versatile electric actuator designed for precise control in various industrial applications. Key features include:
1. Compact Design: Its small footprint allows for easy installation in tight spaces.
2. High Torque Output: Provides sufficient torque for demanding applications, ensuring reliable performance.
3. Adjustable Speed: Offers variable speed settings to accommodate different operational requirements.
4. Built-in Feedback: Equipped with position sensors for accurate feedback and control, enhancing precision.
5. Durability: Constructed with robust materials for long-lasting use in harsh environments.
6. Easy Integration: Compatible with various control systems, facilitating seamless automation integration.
7. Energy Efficient: Designed to minimize power consumption while maximizing performance.
Overall, the PMV45EN2R is ideal for applications requiring precise movement and control, such as valve automation and material handling systems.
1. Compact Design: Its small footprint allows for easy installation in tight spaces.
2. High Torque Output: Provides sufficient torque for demanding applications, ensuring reliable performance.
3. Adjustable Speed: Offers variable speed settings to accommodate different operational requirements.
4. Built-in Feedback: Equipped with position sensors for accurate feedback and control, enhancing precision.
5. Durability: Constructed with robust materials for long-lasting use in harsh environments.
6. Easy Integration: Compatible with various control systems, facilitating seamless automation integration.
7. Energy Efficient: Designed to minimize power consumption while maximizing performance.
Overall, the PMV45EN2R is ideal for applications requiring precise movement and control, such as valve automation and material handling systems.
Package
The PMV45EN2R is typically packaged in a TO-220 or similar power package type, designed to handle high voltage and current applications effectively. This packaging provides efficient thermal management and robust physical protection for the semiconductor device.
Pinout
The PMV45EN2R is a dual N-channel MOSFET designed for various applications such as power management and switching. It typically comes in a compact package, like the SO-8, which has 8 pins.
Pin Configuration and Functions:
1. Gate 1 (G1): Input for controlling the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET, connected to the load.
3. Source 1 (S1): Ground or negative supply connection for the first MOSFET.
4. Gate 2 (G2): Input for controlling the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET, connected to the second load.
6. Source 2 (S2): Ground or negative supply connection for the second MOSFET.
7. N/C: Not Connected (generic placeholders for unused pins).
8. N/C: Not Connected (generic placeholders for unused pins).
This configuration allows for efficient switching and control in various electronic circuits.
Pin Configuration and Functions:
1. Gate 1 (G1): Input for controlling the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET, connected to the load.
3. Source 1 (S1): Ground or negative supply connection for the first MOSFET.
4. Gate 2 (G2): Input for controlling the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET, connected to the second load.
6. Source 2 (S2): Ground or negative supply connection for the second MOSFET.
7. N/C: Not Connected (generic placeholders for unused pins).
8. N/C: Not Connected (generic placeholders for unused pins).
This configuration allows for efficient switching and control in various electronic circuits.
Manufacturer
The PMV45EN2R is manufactured by PMV, which is a brand under the umbrella of the company, SABIC (Saudi Basic Industries Corporation). PMV specializes in providing fluid control solutions, including valves, actuators, and related equipment for various industrial applications. SABIC itself is a global leader in the petrochemical industry, involved in the production of chemicals, fertilizers, plastics, and metals. The company operates in numerous sectors, serving industries such as construction, automotive, and healthcare, and is headquartered in Riyadh, Saudi Arabia. PMV focuses on innovation and reliability in its product offerings, catering primarily to the needs of the oil and gas, water treatment, and power generation industries.
Application
PMV45EN2R is a bipolar junction transistor (BJT) typically used in various applications, including power amplification, signal processing, and switching circuits. Its robustness makes it suitable for automotive, industrial control systems, and consumer electronics. It can handle moderate power levels, making it ideal for applications requiring efficient signal modulation and control in communication systems and power supply circuits.
Equivalent
The PMV45EN2R chip is a dual N-channel MOSFET. Equivalent products include:
1. SI2302
2. BSS138
3. 2N7000
4. BS170
Always check specific datasheets for voltage, current ratings, and package compatibility to ensure proper substitution.
1. SI2302
2. BSS138
3. 2N7000
4. BS170
Always check specific datasheets for voltage, current ratings, and package compatibility to ensure proper substitution.
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