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PMV240SPR
MOSFET P-CH 100V 1.2A TO236AB
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- 資料表 PMV240SPR DataSheet
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規格
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchMOS™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 1.2A (Ta) |
| RdsOn(Max)@IdVgs | 365mOhm @ 1.2A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 549 pF @ 50 V |
| PowerDissipation(Max) | 710mW (Ta), 8.3W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-236AB |
概述
Description
PMV240SPR is a member of the PMV-series power MOSFET family. It’s a small, enhancement‑mode, logic‑level transistor intended for low‑voltage switching in compact power‑management circuits (e.g., DC‑DC converters, load switches, protection circuits). The “SPR” suffix denotes a specific surface‑mount package variant, but exact electrical ratings (Vds, Id, Rds(on)), gate charge, and switching characteristics depend on the exact vendor and revision. To use it correctly, obtain the manufacturer’s datasheet for the PMV240SPR variant you have (check packaging, thermal limits, SOA, and safe operating area). If you share the supplier or a link, I can give a precise overview and suggested application circuit.
Features
I don’t have the exact datasheet at hand. Here are the typical features of a PMV240SPR-type MOSFET (N-channel, logic-level) you’d expect:
- N-channel enhancement-mode MOSFET
- Logic-level gate drive (usable at low Vgs, e.g., 2.5–4.5 V)
- Low on-resistance for high efficiency
- Voltage rating in the 20–30 V range (typical for PMVx0 series)
- Package: small SOT-23-3 (Pb-free/RoHS compliant)
- Fast switching with low gate charge
- Integrated body diode for reverse-current protection
- Avalanche/Ruggedness suitable for power-switching and DC-DC applications
For precise numbers (Vds, Id, Rds(on), Vgs(th), etc.), please check the exact PMV240SPR datasheet or provide a link.
- N-channel enhancement-mode MOSFET
- Logic-level gate drive (usable at low Vgs, e.g., 2.5–4.5 V)
- Low on-resistance for high efficiency
- Voltage rating in the 20–30 V range (typical for PMVx0 series)
- Package: small SOT-23-3 (Pb-free/RoHS compliant)
- Fast switching with low gate charge
- Integrated body diode for reverse-current protection
- Avalanche/Ruggedness suitable for power-switching and DC-DC applications
For precise numbers (Vds, Id, Rds(on), Vgs(th), etc.), please check the exact PMV240SPR datasheet or provide a link.
Application
General-purpose power-switching MOSFET for low-voltage systems. Applications: high-side/low-side load switching, power-path control in DC-DC converters, battery management and protection circuits, automotive and industrial controllers, and other power-management designs requiring fast switching and low Rds(on).
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