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PMV20XNEAR
MOSFET N-CH 20V 6.3A TO236AB
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- 製造商。 部分 #PMV20XNEAR
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- 資料表 PMV20XNEAR DataSheet
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規格
| Supplier | Nexperia USA Inc.,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 6.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 20mOhm @ 6.3A, 4.5V |
| Vgs(th)(Max)@Id | 1.25V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 930 pF @ 10 V |
| PowerDissipation(Max) | 460mW (Ta), 6.94W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-236AB |
概述
Description
PMV20XNEAR is a 20-V N-channel enhancement MOSFET in a compact NEAR package from Nexperia (PMV20X family). It’s designed for fast, efficient switching in portable and power-electronics applications such as DC-DC converters, load switches, and low-/high-side switches.
Key points:
- Voltage/current: Vds ≈ 20 V; Id rating depends on the exact package.
- Gate: Logic-level drive (Vgs(th) low); Rds(on) low for reduced conduction losses; check Rds(on) at your drive voltage (e.g., 4.5 V, sometimes 2.5 V).
- Other specs: Gate charge (Qg), thermal resistance, and avalanche ruggedness vary by package; consult the datasheet for exact values.
- Package: NEAR variant denotes a specific compact package with defined pinout and thermal characteristics.
How to use:
- Drive the gate with an appropriate Vgs per the datasheet.
- Include proper gate drive components and protection.
- Ensure adequate heatsinking/thermal design for your current level.
For precise electrical numbers and pinout, refer to the PMV20XNEAR datasheet for the exact variant you plan to use.
Key points:
- Voltage/current: Vds ≈ 20 V; Id rating depends on the exact package.
- Gate: Logic-level drive (Vgs(th) low); Rds(on) low for reduced conduction losses; check Rds(on) at your drive voltage (e.g., 4.5 V, sometimes 2.5 V).
- Other specs: Gate charge (Qg), thermal resistance, and avalanche ruggedness vary by package; consult the datasheet for exact values.
- Package: NEAR variant denotes a specific compact package with defined pinout and thermal characteristics.
How to use:
- Drive the gate with an appropriate Vgs per the datasheet.
- Include proper gate drive components and protection.
- Ensure adequate heatsinking/thermal design for your current level.
For precise electrical numbers and pinout, refer to the PMV20XNEAR datasheet for the exact variant you plan to use.
Features
PMV20XNEAR is Nexperia’s PMV20X series N-channel logic‑level power MOSFET in a compact NEAR package. Key features:
- Vds rating: around 20 V (for low-voltage power switching)
- Very low Rds(on): enables high efficiency and reduced heat
- Logic‑level gate drive: suitable for 2.5–4.5 V gate drive
- Low gate charge: supports fast switching and lower drive power
- Small NEAR package: compact footprint with good thermal performance
- Robust switching: fast switching characteristics, suitable for DC‑DC converters and load switches
- Avalanche/inductive‑load ruggedness: protection against transients
- RoHS compliant and Pb‑free
Note: Exact Id, Rds(on), and package details vary by subpart. For precise numbers, consult the specific PMV20XNEAR datasheet.
- Vds rating: around 20 V (for low-voltage power switching)
- Very low Rds(on): enables high efficiency and reduced heat
- Logic‑level gate drive: suitable for 2.5–4.5 V gate drive
- Low gate charge: supports fast switching and lower drive power
- Small NEAR package: compact footprint with good thermal performance
- Robust switching: fast switching characteristics, suitable for DC‑DC converters and load switches
- Avalanche/inductive‑load ruggedness: protection against transients
- RoHS compliant and Pb‑free
Note: Exact Id, Rds(on), and package details vary by subpart. For precise numbers, consult the specific PMV20XNEAR datasheet.
Package
SOT-23-3 (SC-70-3) surface-mount package.
Pinout
PMV20XNEAR is a 3‑pin N‑channel MOSFET in an SOT‑23 package (the "R" is a tape‑and‑reel suffix). Pin functions (typical SOT‑23 mapping):
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
(Note: the exposed pad/body is usually connected to the drain on SOT‑23 MOSFETs; always check the device datasheet for exact pin assignment for your specific part.)
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
(Note: the exposed pad/body is usually connected to the drain on SOT‑23 MOSFETs; always check the device datasheet for exact pin assignment for your specific part.)
Manufacturer
Manufacturer: Nexperia.
What kind of company: A Dutch-based global semiconductor company specializing in discrete devices (MOSFETs, diodes, transistors) and related components (logic and ESD protection).
What kind of company: A Dutch-based global semiconductor company specializing in discrete devices (MOSFETs, diodes, transistors) and related components (logic and ESD protection).
Application
PMV20XNEAR is a compact MOSFET for switching in power-management circuits. Typical applications:
- High-side/low-side switches in DC-DC converters and PMICs
- Load switching and reverse-current protection for battery-powered devices
- Power-gating of microcontroller rails
- Driving small inductive loads (motors, relays) with PWM
- General-purpose switching in portable consumer electronics
- High-side/low-side switches in DC-DC converters and PMICs
- Load switching and reverse-current protection for battery-powered devices
- Power-gating of microcontroller rails
- Driving small inductive loads (motors, relays) with PWM
- General-purpose switching in portable consumer electronics
Equivalent
I can’t reliably list equivalents without the manufacturer or key specs. Please provide the PMV20XNEAR datasheet or its package and important limits (VDS, ID, RDS(on), VGS(th), gate charge). With those I’ll return direct replacement parts and cross-references.
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