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PMEG6030EP-QX
DIODE SCHOTTKY 60V 3A SOD128
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規格
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 60 V |
| Current-AverageRectified(Io) | 3A |
| Voltage-Forward(Vf)(Max)@If | 530 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 200 µA @ 60 V |
| Capacitance@VrF | 360pF @ 1V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | SOD-128 |
| SupplierDevicePackage | SOD-128/CFP5 |
概述
Description
PMEG6030EP-QX is a 60 V enhancement‑mode power MOSFET from Nexperia (PMEG family). It delivers low on-resistance, fast switching, and a logic‑level gate in a compact surface‑mount package (QX variant). Typical uses include switching power supplies, DC‑DC converters, load switches, and motor-control circuits. The QX suffix denotes the specific package/reel options. For precise electrical data (Rds(on), Id, Vgs(th), switching characteristics) and temperature performance, consult the latest datasheet.
Features
PMEG6030EP-QX features (concise):
- N-channel enhancement-mode power MOSFET
- 60 V drain–source voltage
- Low on-resistance with trench MOSFET technology for high efficiency
- Low gate charge and input capacitance for fast switching
- Good avalanche ruggedness for inductive loads
- Integrated body diode
- Rugged, surface-mount QX package (RoHS compliant)
Note: exact RDS(on), ID rating, and switching specs are in the datasheet.
- N-channel enhancement-mode power MOSFET
- 60 V drain–source voltage
- Low on-resistance with trench MOSFET technology for high efficiency
- Low gate charge and input capacitance for fast switching
- Good avalanche ruggedness for inductive loads
- Integrated body diode
- Rugged, surface-mount QX package (RoHS compliant)
Note: exact RDS(on), ID rating, and switching specs are in the datasheet.
Package
I don’t have live web access to look up part numbers. Please provide the manufacturer or a datasheet link (or paste the part’s description) and I’ll tell you the exact package type.
Pinout
- Pin count: 2 pins (two-terminal device)
- Function: Schottky barrier rectifier diode (fast, low-forward-voltage rectification) used in 60 V power/rectification applications.
- Function: Schottky barrier rectifier diode (fast, low-forward-voltage rectification) used in 60 V power/rectification applications.
Manufacturer
The PMEG6030EP-QX is made by Nexperia. Nexperia is a global semiconductor company (headquartered in Nijmegen, Netherlands) that specializes in discrete components, MOSFETs, diodes and logic products for power-management and automotive/industrial applications.
Application
PMEG6030EP-QX is a 60V N-channel MOSFET. Common applications:
- High-efficiency DC-DC converters and regulators (buck/boost)
- Load switches and power-path control
- Hot-swap and reverse-current protection
- Battery-management and charger circuits
- Automotive and industrial power-management
- PWM motor drive and other switching applications
- High-efficiency DC-DC converters and regulators (buck/boost)
- Load switches and power-path control
- Hot-swap and reverse-current protection
- Battery-management and charger circuits
- Automotive and industrial power-management
- PWM motor drive and other switching applications
Equivalent
I don’t have that part’s specs here. To list true equivalents I need its key parameters — e.g. maximum reverse voltage (VR), average/continuous forward current (IF), package, polarity and switching type (Schottky, Zener, TVS, etc.). Please provide the datasheet link or those values and I’ll return matched cross‑references.
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