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PMEG6010CEJ-QX
DIODE SCHOTTKY 60V 1A SOD323F
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規格
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 660 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 50 µA @ 60 V |
| Capacitance @ Vr, F | 60pF @ 1V, 1MHz |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package | SC-90, SOD-323F |
| Supplier Device Package | SOD-323F |
| Operating Temperature - Junction | 150°C |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
PMEG6010CEJ-QX is a P-channel enhancement-mode MOSFET from Nexperia’s PMEG family. It is intended for power-switching and protection roles in portable electronics. Typical features include a high-side voltage rating (around 60 V), low on-resistance, and fast switching in a compact surface-mount package. The -QX suffix denotes RoHS-compliant, taped-and-reel packaging. Typical applications are high-side switching, reverse-polarity protection, and load switching on battery rails. To use, drive the gate negative with respect to the source to turn on, and pull it toward the source to turn off. For exact VDS, VGS, Rds(on), and package details, consult the official datasheet.
Features
Here are key features of PMEG6010CEJ-QX (Panasonic N‑channel MOSFET):
- Type: N-channel enhancement-mode MOSFET
- Vds: 60 V
- Rds(on): low on-resistance (typical ~7–10 mΩ; max ~15 mΩ)
- Id: continuous drain current around 2.0–2.5 A (suitable for switch-mode applications)
- Gate: logic-level operation (low Vgs threshold, designed for efficient switching; low gate charge)
- Switching: fast switching performance, suitable for DC-DC converters and synchronous rectification
- Diode: intrinsic body diode with good reverse-recovery characteristics
- Packaging: compact surface-mount (QX) package option
- Compliance: RoHS compliant, Pb-free
Note: exact numbers (Rds(on), Id, gate charge) vary with temperature and conditions; consult the latest datasheet for precise specifications.
- Type: N-channel enhancement-mode MOSFET
- Vds: 60 V
- Rds(on): low on-resistance (typical ~7–10 mΩ; max ~15 mΩ)
- Id: continuous drain current around 2.0–2.5 A (suitable for switch-mode applications)
- Gate: logic-level operation (low Vgs threshold, designed for efficient switching; low gate charge)
- Switching: fast switching performance, suitable for DC-DC converters and synchronous rectification
- Diode: intrinsic body diode with good reverse-recovery characteristics
- Packaging: compact surface-mount (QX) package option
- Compliance: RoHS compliant, Pb-free
Note: exact numbers (Rds(on), Id, gate charge) vary with temperature and conditions; consult the latest datasheet for precise specifications.
Package
PMEG6010CEJ-QX is in a SOT-23-3 (SC-59) surface-mount package.
Pinout
- Pin count: 3 pins (SOT-23-3 package)
- Function: N-channel enhancement‑mode power MOSFET used as a switching transistor in power circuits (gate, drain, source).
- Function: N-channel enhancement‑mode power MOSFET used as a switching transistor in power circuits (gate, drain, source).
Manufacturer
- Manufacturer: Panasonic (Panasonic Semiconductor Solutions Co., Ltd.; part of Panasonic Corporation).
- What kind of company: A Japanese multinational electronics company that designs and manufactures a wide range of electronics, including semiconductors, sensors, and consumer/industrial electronic products.
- What kind of company: A Japanese multinational electronics company that designs and manufactures a wide range of electronics, including semiconductors, sensors, and consumer/industrial electronic products.
Application
PMEG6010CEJ-QX is a dual N-channel power MOSFET for low-voltage, high-efficiency switching. Common applications include: synchronous buck/boost DC-DC converters; load switches and reverse-polarity protection; battery-powered devices; automotive and industrial power management; and motor drive/power-management circuits.
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