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NVMFD5853NLWFT1G
MOSFET 2N-CH 40V 12A 8DFN
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規格
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Power - Max | 3W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Base Product Number | NVMFD5853 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
概述
Description
The NVMFD5853NLWFT1G is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power management in electronic devices. Key features of this MOSFET include a low on-state resistance, which enhances efficiency by reducing power loss during operation. It comes in a compact, surface-mount package, making it suitable for high-density circuit designs. The device is optimized for low-voltage applications and offers excellent switching performance. It is typically used in applications such as DC-DC converters, power supplies, and load switching. Additionally, it provides robust performance with a high level of reliability, making it a dependable choice for designers looking to optimize power efficiency in their circuits.
Features
The NVMFD5853NLWFT1G is a power MOSFET designed by ON Semiconductor, suitable for a variety of power management applications. Key features include:
1. N-Channel MOSFET: It supports efficient switching and amplifying electronic signals.
2. Low On-Resistance: The device offers low on-resistance, minimizing power loss and improving efficiency.
3. Voltage Rating: It typically has a high voltage rating, enabling it to handle significant power levels safely.
4. Current Capacity: The MOSFET can support high current levels, suitable for demanding applications.
5. Package Type: It is usually available in a compact surface-mount package, facilitating easy integration into circuit boards.
6. Thermal Performance: The design aids in effective heat dissipation, enhancing reliability and longevity.
7. Ruggedness: Designed for durability, it can withstand harsh operating environments.
These features make the NVMFD5853NLWFT1G ideal for applications like power conversion, motor control, and other high-frequency switching operations.
1. N-Channel MOSFET: It supports efficient switching and amplifying electronic signals.
2. Low On-Resistance: The device offers low on-resistance, minimizing power loss and improving efficiency.
3. Voltage Rating: It typically has a high voltage rating, enabling it to handle significant power levels safely.
4. Current Capacity: The MOSFET can support high current levels, suitable for demanding applications.
5. Package Type: It is usually available in a compact surface-mount package, facilitating easy integration into circuit boards.
6. Thermal Performance: The design aids in effective heat dissipation, enhancing reliability and longevity.
7. Ruggedness: Designed for durability, it can withstand harsh operating environments.
These features make the NVMFD5853NLWFT1G ideal for applications like power conversion, motor control, and other high-frequency switching operations.
Package
The NVMFD5853NLWFT1G is a MOSFET packaged in a WDFN (Widely spaced Dual Flat No-leads) format. More specifically, it has an 8-lead WDFN package. This type of packaging is known for providing efficient thermal performance and compact design, benefiting applications with limited space.
Pinout
The NVMFD5853NLWFT1G is a Power MOSFET produced by ON Semiconductor. It is a dual N-channel MOSFET, which typically means it includes two MOSFETs within a single package. The device is designed for use in applications such as DC-DC converters, load switching, and power management in various electronic devices.
The package type for the NVMFD5853NLWFT1G is usually a small-footprint package suitable for surface mounting, often with a pin count that supports the dual MOSFET configuration. Specific pin counts can vary based on the exact package type; however, for a dual MOSFET in a standard package like a small-outline package (SO) or similar, you might typically see around 8 pins.
In terms of function, each MOSFET within the package will have a gate, drain, and source pin. These pins are used to control the switching and amplification of electronic signals, making the device useful in various power management and conversion applications. Please refer to the manufacturer's datasheet for the most accurate and detailed information.
The package type for the NVMFD5853NLWFT1G is usually a small-footprint package suitable for surface mounting, often with a pin count that supports the dual MOSFET configuration. Specific pin counts can vary based on the exact package type; however, for a dual MOSFET in a standard package like a small-outline package (SO) or similar, you might typically see around 8 pins.
In terms of function, each MOSFET within the package will have a gate, drain, and source pin. These pins are used to control the switching and amplification of electronic signals, making the device useful in various power management and conversion applications. Please refer to the manufacturer's datasheet for the most accurate and detailed information.
Manufacturer
The NVMFD5853NLWFT1G is manufactured by onsemi, formerly known as ON Semiconductor. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. The company caters to various industries such as automotive, industrial, computing, consumer, and communications. Onsemi focuses on providing innovative solutions that enhance energy efficiency and enable sustainable technologies.
Application
The NVMFD5853NLWFT1G is a Power MOSFET typically used in applications requiring efficient power management and control. Its primary application areas include DC-DC converters, battery management systems, and power management circuits in automotive and industrial applications. It is also suitable for use in load switching and motor drive circuits due to its low on-resistance and high current handling capabilities.
Equivalent
The NVMFD5853NLWFT1G is a MOSFET device from ON Semiconductor. Equivalent products might include similar MOSFETs from other manufacturers like the SiS415D from Vishay, the IRF7759L1 from Infineon, and the DMN3011LSN from Diodes Incorporated. However, always verify the electrical characteristics and package compatibility to ensure they meet your specific application requirements.
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