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NUP2201MR6T1G

Name: NUP2201MR6T1G
Rating: 4.7 (12 reviews)

TVS DIODE 5VWM 20VC 6TSOP

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包 TSOP-6
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規格

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
Type	Steering (Rail to Rail)
UnidirectionalChannels	2
Voltage-ReverseStandoff(Typ)	5V (Max)
Voltage-Breakdown(Min)	6V
Voltage-Clamping(Max)@Ipp	20V
Current-PeakPulse(10/1000µs)	8A (8/20µs)
Power-PeakPulse	500W
PowerLineProtection	Yes
Applications	General Purpose
Capacitance@Frequency	3pF @ 1MHz
OperatingTemperature	-40°C ~ 125°C (TJ)
MountingType	Surface Mount
Package/Case	SOT-23-6 Thin, TSOT-23-6

概述

Description

The NUP2201MR6T1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is manufactured by ON Semiconductor and is commonly used in power management and electronic switching circuits due to its low on-resistance and fast switching capabilities. This device features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.1A, making it suitable for low-voltage applications.
The NUP2201MR6T1G is packaged in a small, surface-mount form factor (SOT-23), which is advantageous for space-constrained designs. Its gate threshold voltage (Vgs(th)) typically ranges from 1V to 2.5V, allowing it to be driven by low-voltage control signals.
Key specifications include low Rds(on), efficient thermal performance, and high reliability, making it ideal for consumer electronics, automotive applications, and industrial devices. Overall, the NUP2201MR6T1G is a versatile component in modern electronic design.

Features

The NUP2201MR6T1G is a low-voltage, high-speed, single N-channel MOSFET. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 20V, making it suitable for low-voltage applications.
2. Current Handling: The device supports a continuous drain current (ID) of up to 1.3A, allowing for efficient power management.
3. RDS(on): It offers a low on-resistance (RDS(on)) of around 0.3 ohms at a gate-source voltage (VGS) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (VGS(th)) ranges from 1V to 3V, enabling it to operate effectively with low gate drive voltages.
5. Package: It comes in a compact SOT-23 package, facilitating space-saving designs in modern electronics.
6. Applications: Suitable for use in load switching, power management, and other general-purpose applications in consumer electronics.
Overall, the NUP2201MR6T1G is designed for efficient performance in small form-factor solutions.

Package

The NUP2201MR6T1G is packaged in a MicroPak™ (SOT-23) type. This compact surface-mount package is designed for space-efficient applications in electronic circuits.

Pinout

The NUP2201MR6T1G is a single N-channel MOSFET with a total pin count of 6. Its primary function is to serve as a power switch, controlling the flow of current in various applications such as power management, load switching, and signal routing. The device features a low on-resistance and fast switching capabilities, making it suitable for efficient power applications.
The pin configuration includes:
1. Gate (G): Controls the MOSFET on/off state.
2. Drain (D): The output for current flow.
3. Source (S): Connects to ground or the load.
4. Body Diode: An intrinsic diode that allows current to flow in the reverse direction.
The NUP2201MR6T1G is designed for low voltage applications, typically operating up to 30V. Its compact package and efficient performance make it ideal for space-constrained electronic designs.

Manufacturer

The NUP2201MR6T1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient electronics. The company provides a wide range of products including power management, analog, logic, and mixed-signal devices, primarily serving markets such as automotive, industrial, and consumer electronics. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor aims to support innovation in various applications through its diverse portfolio and commitment to sustainability.

Application

The NUP2201MR6T1G is a dual N-channel MOSFET primarily used in power management applications. Its application areas include load switching, power routing, battery management systems, and DC-DC converters. It is suitable for automotive, consumer electronics, and industrial equipment due to its efficiency and compact design.

Equivalent

The NUP2201MR6T1G is a low-power, single-channel N-channel MOSFET. Equivalent products include:
1. BSS138
2. 2N7000
3. BS170
Ensure to check the specific electrical characteristics and package compatibility before substituting any component in your circuit.