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NTZD5110NT1G
MOSFET 2N-CH 60V 294MA SOT563
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- 包 SOT-563, SOT-666
- 資料表 NTZD5110NT1G DataSheet
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規格
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 294mA |
| RdsOn(Max)@IdVgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.7nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 24.5pF @ 20V |
| Power-Max | 250mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
概述
Description
The NTZD5110NT1G is a dual-channel, low-voltage, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications including power management and switching. It features a low on-resistance (R_DS(on)), which minimizes power losses, making it suitable for high-efficiency designs. This MOSFET can handle a maximum drain-source voltage (V_DS) typically around 30V, with a continuous drain current (I_D) rating that allows it to manage significant power loads in compact circuits.
The NTZD5110NT1G is packaged in a compact SOT-23 format, facilitating easy integration into space-constrained applications. Its fast switching capabilities contribute to improved performance in switching power supplies, motor drivers, and load switches. Additionally, it offers thermal stability and reliability, making it a popular choice in consumer electronics and automotive applications. Key parameters such as gate threshold voltage and temperature ratings must be considered during design to ensure optimal performance in specific use cases.
The NTZD5110NT1G is packaged in a compact SOT-23 format, facilitating easy integration into space-constrained applications. Its fast switching capabilities contribute to improved performance in switching power supplies, motor drivers, and load switches. Additionally, it offers thermal stability and reliability, making it a popular choice in consumer electronics and automotive applications. Key parameters such as gate threshold voltage and temperature ratings must be considered during design to ensure optimal performance in specific use cases.
Features
The NTZD5110NT1G is a N-channel MOSFET designed for various applications where efficient power management is required. Key features include:
1. Low On-Resistance (R_DS(on)): Ensures minimal power loss and heat generation during operation.
2. High Voltage Rating: Typically rated for 100V, making it suitable for high-voltage applications.
3. Low Gate Threshold Voltage: Allows for efficient switching at lower gate drive voltages.
4. Fast Switching Speed: Enhances performance in high-frequency applications, reducing switching losses.
5. Compact Package: Available in a surface-mount package (SOT-23), facilitating space-saving designs on PCBs.
6. Thermal Resistance: Good thermal performance enables operation at higher currents without overheating.
7. Applications: Commonly used in power management, DC-DC converters, and load switching.
These characteristics make the NTZD5110NT1G a reliable choice for engineers looking to design efficient electronic circuits.
1. Low On-Resistance (R_DS(on)): Ensures minimal power loss and heat generation during operation.
2. High Voltage Rating: Typically rated for 100V, making it suitable for high-voltage applications.
3. Low Gate Threshold Voltage: Allows for efficient switching at lower gate drive voltages.
4. Fast Switching Speed: Enhances performance in high-frequency applications, reducing switching losses.
5. Compact Package: Available in a surface-mount package (SOT-23), facilitating space-saving designs on PCBs.
6. Thermal Resistance: Good thermal performance enables operation at higher currents without overheating.
7. Applications: Commonly used in power management, DC-DC converters, and load switching.
These characteristics make the NTZD5110NT1G a reliable choice for engineers looking to design efficient electronic circuits.
Package
The NTZD5110NT1G is packaged in a 3x3 mm, 8-pin DFN (Dual Flat No-leads) package. This compact surface-mount package is designed for efficient thermal performance and space-saving in electronic applications.
Pinout
The NTZD5110NT1G is a dual N-channel MOSFET with a total of 6 pins. Its primary functions include low-side switching applications, where it is used to control load currents efficiently. The device features a maximum continuous drain current of 10A and operates with a low gate threshold voltage, making it suitable for various power management and switching applications.
The pin configuration is as follows:
1. Gate1 (G1) - Gate terminal for the first MOSFET.
2. Drain1 (D1) - Drain terminal for the first MOSFET.
3. Source1 (S1) - Source terminal for the first MOSFET.
4. Gate2 (G2) - Gate terminal for the second MOSFET.
5. Drain2 (D2) - Drain terminal for the second MOSFET.
6. Source2 (S2) - Source terminal for the second MOSFET.
The device is designed for high efficiency in power applications, suitable for consumer electronics, motor control, and other similar uses.
The pin configuration is as follows:
1. Gate1 (G1) - Gate terminal for the first MOSFET.
2. Drain1 (D1) - Drain terminal for the first MOSFET.
3. Source1 (S1) - Source terminal for the first MOSFET.
4. Gate2 (G2) - Gate terminal for the second MOSFET.
5. Drain2 (D2) - Drain terminal for the second MOSFET.
6. Source2 (S2) - Source terminal for the second MOSFET.
The device is designed for high efficiency in power applications, suitable for consumer electronics, motor control, and other similar uses.
Manufacturer
The NTZD5110NT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient innovations and providing a wide range of products, including analog, digital, and mixed-signal semiconductor devices. The company serves various industries, including automotive, industrial, and consumer electronics, with a commitment to sustainability and reducing energy consumption in electronic devices.
Application
The NTZD5110NT1G is a high-speed, low-capacitance TVS diode designed for ESD protection. Its application areas include protecting sensitive electronic components in consumer electronics, automotive systems, industrial equipment, and communication devices. It is ideal for safeguarding interfaces like USB, HDMI, and Ethernet from voltage spikes and electrostatic discharges, ensuring reliability and longevity of electronic circuits.
Equivalent
The NTZD5110NT1G is a N-channel MOSFET designed for power applications. Equivalent products include the BSS138, STP16NF06, and IRF520, depending on specific requirements such as voltage ratings and current handling. Always verify specifications like Vds, Id, and Rds(on) to ensure compatibility with your application.
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